PAM XIAMEN offers GaN on SiC for RF.
1.1 GaN HEMT Structure on Sapphire for RF Application
| Wafer size | 2”, 3”, 4”, 6” |
| AlGaN/GaN HEMT structure | Refer 1.2 |
| Carrier density | 6E12~2E13 cm2 |
| Hall mobility | / |
| XRD(102)FWHM | / |
| XRD(002)FWHM | / |
| Sheet Resistivity | 200~450 ohm/sq |
| AFM RMS (nm）of 5x5um2 | <0.25nm |
| Bow(um) | <=35um |
| Edge exclusion | <2mm |
| SiN passivation layer | / |
| GaN cap layer | / |
| Al composition | 20-30% |
| In composition | 17% for InAlN |
| AlGaN | / |
| AlN interlayer | / |
| GaN channel | / |
| Fe doped GaN buffer | 1.6um |
| AlN buffer layer | / |
| Substrate material | Sapphire substrate |
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.