PAM XIAMEN offers GaN on SiC for RF.
1.1 GaN HEMT Structure on Sapphire for RF Application
|Wafer size||2”, 3”, 4”, 6”|
|AlGaN/GaN HEMT structure||Refer 1.2|
|Carrier density||6E12~2E13 cm2|
|Sheet Resistivity||200~450 ohm/sq|
|AFM RMS (nm）of 5x5um2||<0.25nm|
|SiN passivation layer||/|
|GaN cap layer||/|
|In composition||17% for InAlN|
|Fe doped GaN buffer||1.6um|
|AlN buffer layer||/|
|Substrate material||Sapphire substrate|
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.