GaN on SiC for RF

PAM XIAMEN offers GaN on SiC for RF.

1.1 GaN HEMT Structure on Sapphire for RF Application

Wafer size 2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure Refer 1.2
Carrier density 6E12~2E13 cm2
Hall mobility /
XRD(102)FWHM /
XRD(002)FWHM /
Sheet Resistivity 200~450 ohm/sq
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=35um
Edge exclusion  <2mm
SiN passivation layer  /
GaN cap layer  /
Al composition 20-30%
In composition 17% for InAlN
AlGaN   /
AlN interlayer /
GaN channel /
Fe doped GaN buffer 1.6um
AlN buffer layer /
Substrate material Sapphire substrate

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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