GaN on SiC for RF

PAM XIAMEN offers GaN on SiC for RF.

1. GaN HEMT Wafer on SiC for RF Application

Wafer size 2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure Refer 1.2
Carrier density 6E12~2E13 cm2
Hall mobility 1300~2200 cm2v-1s-1
Sheet Resistivity 200~450 ohm/sq
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=35um
Edge exclusion <2mm
SiN passivation layer 0~30nm
GaN cap layer 2nm
Al composition 20-30%
In composition xx% for InAlN
AlGaN  /
AlN interlayer /
GaN channel /
Fe doped GaN buffer 1.6um
AlN buffer layer /
Substrate material SiC Substrate


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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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