PAM-XIAMEN offers GaN/SiC HEMT epi-wafers
GaN on SiC HEMT epi-wafers (PAM-101009-HEMT
1) 4-inch SiC substrate
2) nucleation layer
3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A
4) Barrier layer (AlN) – 60-70A
5) Spacer (GaN) – 10A
6) SiN layer – 30A
Expected characteristics of transistor:
Mobility: >=1200 cm2/V*s
Breakdown voltage: >=80V
Resistance: <= 300Ohm/sq
For more information, send us email at [email protected]
PAM XIAMEN offers 2″ Silicon Wafer.Diameter (mm) Type Dopant Growth method Orientation Resistivity Thickness Surface Grade50.8 N Phos FZ (111) Off 2″ Towards (110) 2k-5k 350-400 P/E PRIME50.8 N Phos CZ -100 1-20 10-30 P/P PRIME50.8 N Phos CZ -100 1-20 40-60 P/P PRIME50.8 N Phos CZ -100 1-20 80-100 P/P PRIME50.8 N Phos CZ -100 1-20 140-160 P/P PRIME50.8 N Phos FZ -100 >1000 200-500 P/E PRIME50.8 N Phos FZ -100 >1000 200-500 P/P PRIME50.8 N Phos CZ -100225-275 P/P PRIME50.8 N Phos FZ -100 >3000 225-275 P/P PRIME50.8 N As CZ -100 .001-.005 250-300 P/E PRIME50.8 N Sb CZ -100 .005-.02 250-300 P/P PRIME50.8 N Phos FZ -100 >3000 250-300 P/E PRIME50.8 N Phos CZ -100 1-20 250-300 P/E PRIME50.8 N Phos CZ -100 1-20 250-300 P/E/DTOx PRIME50.8 N Phos CZ -100 1-20 250-300 P/E/Ni PRIME50.8 N Phos CZ -100 1-20 250-300 P/E/WTOx50.8 N Phos FZ -100 2000-5000 275-325 P/P PRIME50.8 N Phos CZ -100450-500 P/P PRIME50.8 N Phos CZ -100 43485 500-550 P/E PRIME50.8 N Phos CZ -1001000-1050 P/E PRIME50.8 N Phos CZ -100 1-20 2900-3100 P/E PRIMEFor more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal [...]
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PAM XIAMEN offers YAG( undoped ,Ce-doped,Nd-doped). YAG (undoped) Undoped YAG is a substrate material that can be used for UV and IR optics. Sapphire has been the substrate of choice for these applications; however it is difficult to polish Sapphire to a 10-5 scratch-dig [...]
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PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline). General Properties for Titanium Symbol Ti Atomic Number 22 Atomic Weight: 47.867 Crystal structure: HCP Lattice constant at room temperature a: 0.295 nm Lattice constant at room temperature b: 0.468 nm Density: 4.506 g/cm3 Melting Point: 1668°C [...]
PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm Si wafers Orientation (100) Dia 6” x thickness 500µm Type n or p 1-20 ohm.cm One side polished For more information, send us email at [email protected] and [email protected]
