PAM-XIAMEN offers GaN/SiC HEMT epi-wafers
GaN on SiC HEMT epi-wafers (PAM-101009-HEMT
1) 4-inch SiC substrate
2) nucleation layer
3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A
4) Barrier layer (AlN) – 60-70A
5) Spacer (GaN) – 10A
6) SiN layer – 30A
Expected characteristics of transistor:
Mobility: >=1200 cm2/V*s
Breakdown voltage: >=80V
Resistance: <= 300Ohm/sq
For more information, send us email at victorchan@powerwaywafer.com
The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]
C-Plane Sapphire Substrate AM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec: 2” C-plane SSP Sapphire Substrate: No Item Specification 1 Material High PurityAl2O3 2 Diameter 50.8+0.1mm 3 Thickness 430土15um 4 TTV ≤10μm 5 LTV ≤1.5μm 6 Bow -10~0μm 7 Warp ≤10μm 8 Primary Flat Length 16.0土1.0mm 9 Front Surface Roughness(Ra)| Ra≤0.2nm Back Surface Roughness(Ra) 0.7~1.2μm 11 Primary Flat Orientation A-plane土0.2° 12 Surface Orientation C-Plane(0001) off Angle 0.2o+0.1″(M-axis);0°+0.1″(A-axis) 13 Laser Mark back side or frontside 14 Package 25pcs/Cassette, Vacuum-sealed, Nitrogen- filled, Class-100 Cleanroom Remark: [...]
Photoluminescence and Raman studies of GaN films grown by MOCVD The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power [...]
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer between the grown ZnO nanorods and substrate, which can interfere with light emission and extraction. Here we [...]
PAM XIAMEN offers ZnTe single crystal substrate. ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40 ZnTe, N type, (110) [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:GaN LEDs fabricated using SF6 plasma RIE Published by: Wasif Khan ; Xiaopeng Bi ; Bin Fan ; Wen Li Department of Electrical and [...]
