PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Boron
P
100
0,0 ± 0,0
110 ± 0,20
0.0 ± 0.1 °
1 – 20 Ohmcm
150.0 ± 0.2 mm
675 ± 5 µm
60
3
6
DSP
Boron
P
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5°
30 – [...]
2019-02-25meta-author
PAM XIAMEN offers Lithium Chip.
Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D
Lithium chip is widely used for Li-ion and Li metal rechargeable battery R&D.
SPECIFICATIONS:
Purity
99.9% Lithium
Melting Point
180.5 °C
Density
0.534 g/cm3
Color
Silver
Dimension
16 mm x 0.6 mm
(diameter x [...]
2019-05-07meta-author
Philips Lighting Forms Smart Lighting Partnership with Huawei
Philips Lighting, a global leader in lighting, and Huawei Technologies have signed a partnership agreement to ensure the seamless interoperability of the Philips Hue connected lighting system for the home with Huawei’s OceanConnect Internet of Things (IoT) [...]
2016-09-26meta-author
PAM-XIAMEN offers GaN on GaN wafer, which uses the homogeneous substrate. The main application market of GaN-on-GaN epi wafer is blue/green lasers, which are used in laser display, laser storage, laser lighting and other fields.
1. GaN on GaN Epitaxy Structure
Item 1:
Epitaxial Layer
Thickness
GaN Cap
3nm
AlxGaN
20nm
AIN
1nm
GaN
0.5um
Buffer layer
3um
GaN substrate
Item 2: 2” and 4” GaN Sub [...]
2019-05-17meta-author
Silicon wafers can be supplied with specifications as found in: https://www.powerwaywafer.com/silicon-wafer
Silicon is a semiconductor material, and its resistivity is closely related to the doping concentration. Doping is that introducing a small amount of impurities into silicon crystals to alter their electrical properties. According to the [...]
2024-03-29meta-author
Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of [...]
2023-03-17meta-author