PAM-XIAMEN offers GaN/SiC HEMT epi-wafers
GaN on SiC HEMT epi-wafers (PAM-101009-HEMT
1) 4-inch SiC substrate
2) nucleation layer
3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A
4) Barrier layer (AlN) – 60-70A
5) Spacer (GaN) – 10A
6) SiN layer – 30A
Expected characteristics of transistor:
Mobility: >=1200 cm2/V*s
Breakdown voltage: >=80V
Resistance: <= 300Ohm/sq
For more information, send us email at victorchan@powerwaywafer.com
PAM XIAMEN offers 2″ FZ Si wafer with SSP 2″ Undoped Silicon Wafer Diameter: 50.8mm Thickness: 300um Polished : Single Side Polished Orientation: <100> Resistivity >10,000Ωcm For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 500±25um. 6″ Si wafer DSP N-type <111> thickness 500±25um resistivity40-100Ωcm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrate (100) BaTiO3 (100) 10×3 x0.5 mm, 1SP Substrate grade (with domains) BaTiO3 (100) 5×5 x0.15 mm, 1SP Substrate grade (with domains) BaTiO3 (100) 5×5 x0.5 mm, 1SP Substrate grade (with domains) BaTiO3 (100) 5×5 x0.5 mm, 2SP [...]
As one of 5G semiconductor manufacturers, Xiamen Powerway Advanced Material Co., Ltd. can offer compound semiconductor materials with unique advantages in the physical properties, and the 5g compound semiconductor market of PAM-XIAMEN is enlarging. The semiconductor materials have experienced three stages of development: the first stage is group [...]
At present, most InAs/GaSb ll superlattices are grown on lattice matched GaSb substrates. However, due to the high price of GaSb substrate, the absence of semi-insulating substrate, and the complexity of the process, seeking to grow GaSb bulk materials on new substrates, such as [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 90 n- Si:P 41±10% n/n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 5±10% n/n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 96 n- Si:P 30±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 21±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 16 ±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 12±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 20±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 135 n- Si:P 35±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 140 n- Si:P 31±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 38±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 25±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 150 n- Si:P 44±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 158 n- Si:P 67±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 8 n- Si:P 0.63±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 0.07±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 30 n- Si:P 6.75±10% n/n+ 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 75 n- Si:P 40±10% n/n/n+ 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 25 n- Si:P 2.5±10% n/n/n+ For [...]
