GaN/SiC HEMT epi-wafers

PAM-XIAMEN offers GaN/SiC HEMT epi-wafers

GaN on SiC HEMT epi-wafers (PAM-101009-HEMT

1) 4-inch SiC substrate
2) nucleation layer
3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A
4) Barrier layer (AlN) – 60-70A
5) Spacer (GaN) – 10A
6) SiN layer – 30A

Expected characteristics of transistor:
Mobility: >=1200 cm2/V*s
Breakdown voltage: >=80V
Resistance: <= 300Ohm/sq

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