PAM-XIAMEN offers GaN/SiC HEMT epi-wafers
GaN on SiC HEMT epi-wafers (PAM-101009-HEMT
1) 4-inch SiC substrate
2) nucleation layer
3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A
4) Barrier layer (AlN) – 60-70A
5) Spacer (GaN) – 10A
6) SiN layer – 30A
Expected characteristics of transistor:
Mobility: >=1200 cm2/V*s
Breakdown voltage: >=80V
Resistance: <= 300Ohm/sq
For more information, send us email at [email protected]
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