GaN Templates

PAM-XIAMEN’s Template Products consist of crystalline layers of (gallium nitride)GaN templates, (aluminum nitride)AlN template,(aluminum gallium nitride) AlGaN templates and (indium gallium nitride) InGaN templates, which are deposited on sapphire
  • Description

Product Description

GaN Template (gallium nitride template)

PAM-XIAMEN’s GaN Template consists of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN) and indium gallium nitride (InGaN), which are epilayer on sapphire and electronic grade for fabrication as MOS-based devices. PAM-XIAMEN’s Gallium Nitride Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.

2″(50.8mm) GaN Templates Epitaxy on Sapphire Substrates

ItemPAM-2inch-GaNT-NPAM-2inch-GaNT-SI
Conduction TypeN-typeSemi-insulating
DopantSi doped or undopedFe doped
Size2″(50mm) dia.
Thickness4um,20um,30um,50um,100um30um,90um
OrientationC-axis(0001)+/-1°
Resistivity(300K)<0.05Ω·cm>1×106Ω·cm
Dislocation Density<1x108cm-2
Substrate Structure GaN on Sapphire(0001)
Surface FinishSingle or Double Side Polished,epi-ready
Usable Area≥ 90 %

2″ (50.8mm)GaN Templates Epitaxy on Sapphire Substrates

ItemPAM-GaNT-P
Conduction TypeP-type
DopantMg doped
Size2″(50mm) dia.
Thickness5um,20um,30um,50um,100um
OrientationC-axis(0001)+/-1°
Resistivity(300K)<1Ω·cm or custom
Dopant Concentration1E17(cm-3)  or custom
Substrate Structure GaN on Sapphire(0001)
Surface FinishSingle or Double Side Polished,epi-ready
Usable Area≥ 90 %

 3″(76.2mm)GaN Templates Epitaxy on Sapphire Substrates

ItemPAM-3inch-GaNT-N
Conduction TypeN-type
DopantSi doped or undoped
Exclusion Zone:5mm from outer diameter
Thickness:20um,30um
Dislocation density< 1x108cm-2
Sheet resistance (300K):<0.05Ω·cm
Substrate: sapphire
Orientation : C-plane
Sapphire thickness:430um
Polishing:Single side Polished,epi-ready, with atomic steps.
Backside coating:(custom)high quality Titanium coating, thickness > 0.4 μm
Packing:Individually packed under argon
Atmosphere vacuum sealed in class 100 clean room.

3″(76.2mm)GaN Templates Epitaxy on Sapphire Substrates

ItemPAM-3inch-GaNT-SI
Conduction TypeSemi-insulating
DopantFe Doped
Exclusion Zone:5mm from outer diameter
Thickness:20um,30um,90um(20um is the best)
Dislocation density< 1x108cm-2
Sheet resistance (300K): >106 ohm.cm
Substrate: sapphire
Orientation : C-plane
Sapphire thickness:430um
Polishing:Single side Polished,epi-ready, with atomic steps.
Backside coating:(custom)high quality Titanium coating, thickness > 0.4 μm
Packing:Individually packed under argon Atmosphere vacuum sealed in class 100 clean room.

4″(100mm)GaN Templates Epitaxial on Sapphire Substrates

ItemPAM-4inch-GaNT-N
Conduction TypeN-type
Dopant  undoped
Thickness:4um
Dislocation density< 1x108cm-2
Sheet resistance (300K):<0.05Ω·cm
Substrate: sapphire
Orientation : C-plane
Sapphire thickness:
Polishing:Single side Polished,epi-ready, with atomic steps.
Packing:Individually packed under argon Atmosphere
vacuum sealed in class 100 clean room.

2″ (50.8mm)AlGaN, InGaN, AlN Epitaxy on Sapphire Templates: custom
2”(50.8mm)AlN Epitaxy on Sapphire Templates

ItemPAM-AlNT-SI
Conduction Typesemi-insulating
DiameterФ 50.8mm ± 1mm
Thickness:1000nm+/- 10%
Substrate: sapphire
Orientation :C-axis(0001)+/-1°
Orientation FlatA-plane
XRD FWHM of (0002)<200 arcsec.
Useable Surface Area≥90%
 Polishing:None

2”(50.8mm)InGaN Epitaxy on Sapphire Templates

ItemPAM-INGAN
Conduction Type
DiameterФ 50.8mm ± 1mm
Thickness:100-200nm, custom
Substrate: sapphire
Orientation :C-axis(0001)+/-1O
DopantIn
Dislocation Density~ 108 cm-2
Useable Surface Area≥90%
Surface FinishSingle or Double Side Polished,epi-ready

2”(50.8mm)AlGaN Epitaxy on Sapphire Templates

ItemPAM-AlNT-SI
Conduction Typesemi-insulating
DiameterФ 50.8mm ± 1mm
Thickness:1000nm+/- 10%
Substrate: sapphire
Orientation :C-plane
Orientation FlatA-plane
XRD FWHM of (0002)<200 arcsec.
Useable Surface Area≥90%
 Polishing:None

GaN Template on Sapphire& Silicon

2″(50.8mm)GaN on 4H or 6H SiC substrate

1)Undoped GaN buffer or AlN buffer are available;
2)n-type(Si doped or undoped), p-type or semi-insulating GaN epitaxial layers available;
3)vertical conductive structures on n-type SiC;
4)AlGaN – 20-60nm thick, (20%-30%Al), Si doped buffer;
5)GaN n-type layer on 330µm+/-25um thick 2” wafer.
6) Single or double side polished, epi-ready, Ra<0.5um
7)Typical value on XRD:
Wafer IDSubstrate IDXRD(102)XRD(002)Thickness
#2153X-70105033 (with AlN)298167679um
     
 Single or double side polished, epi-ready, Ra<0.5um

6″ (150mm)n-GaN on double-side polished flat sapphire

Targetremark 
Substrate diameter150 mm+/- 0.15 mm
Substrate thickness1300 um or 1000um+/- 25 um
c-plane (0001), offcut angle towards m-plane0.2 deg+/- 0.1 deg
Single primary flat length47.5 mm+/- 1 mm
Flat orientationa-plane+/- 0.2 deg
Si-doped n-GaN thickness4 um+/- 5%
Si concentration in n-GaN5e18 cm-3yes
u-GaN thickness1 umno this layer
XRD rocking curve (002)< 250 arcsec<300 arcsec
XRD rocking curve (102)< 250 arcsec<350 arcsec
Dislocation density< 5e8 cm-2yes
Front side surface, AFM (5×5 um2) Ra< 0.5 nm, Epi-readyyes
Back side surfac\e0.6 – 1.2 um, fine groundyes
Wafer bowing< 100 umno this data
n-GaN resistivity (300K)< 0.01 ohm-cm2yes
Total thickness variation< 25 um<10um
Defect densityMacro defects (>100 um):< 1/wafer  Micro defects (1-100 um):< 1/cm2Macro defects (>100 um):< 10/wafer Micro defects (1-100 um):< 10/cm2
Laser markingon the backside of the wafer flatyes
Packagepackaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere, double sealedyes
Edge exclusion< 3 mmyes
Useable surface area> 90%yes

Hydride Vapour Phase Epitaxy (HVPE) process

GaN template on sapphire is grown by HVPE process and technology for the production of compound semiconductors such as GaN, AlN, and AlGaN. GaN templates are used in a wide applications: solid state lighting, short wavelength optoelectronics and RF power device.

In the HVPE process, Group III nitrides (such as GaN, AlN) are formed by reacting hot gaseous metal chlorides (such as GaCl or AlCl) with ammonia gas (NH3). The metal chlorides are generated by passing hot HCl gas over the hot Group III metals. All reactions are done in a temperature controlled quartz furnace.

We will offer test reports, please see below an example:

AlGaN template structure report

FWHM and XRD report

AlN Single Crystal Substrate& Template on Sapphire/Silicon

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