GaN Templates

Product Specifications

PAM XIAMEN offers GaN Templates.

2″GaN Free-standing Substrate

Item PAM-FS-GaN50-N PAM-FS-GaN50-SI
Conduction Type N-type Semi-insulating
Dopant Si doped or undoped Fe doped
Size 2″(50mm) dia.
Thickness 5um,20um,30um,50um,100um 30um,90um
Orientation C-axis(0001)+/-1°
Resistivity(300K) <0.05Ω·cm >1×10^6Ω·cm
Dislocation Density <1×10^8cm-2
Substrate Structure GaN on Sapphire(0001)
Surface Finish Single or Double Side Polished,epi-ready
Usable Area ≥ 90 %

3″GaN Templates Epitaxy on Sapphire Substrates

Item PAM-GaNT-SI
Conduction Type Semi-insulating
Dopant Fe doped
Exclusion Zone: 5mm from outer diameter
Thickness 20um,30um,90um(20um is the best)
Dislocation Density <1×10^8cm-2
Sheet resistance (300K): >10^10 ohm.cm
Substrate: sapphire
Orientation C-plane
Sapphire thickness: 430um
Polishing: Single side Polished,epi-ready, with atomic steps.
Backside coating: high quality Titanium coating, thickness > 0.4 μm
Packing: Individually packed under argon Atmosphere vacuum sealed
in class 100 clean room.

2″ AlGaN, InGaN, AlN Epitaxy on Sapphire Templates: custom
2”AlN Template Epitaxy on Sapphire Templates

Item PAM-AlNT-SI
Conduction Type Semi-insulating
Diameter Ф 50.8mm ± 1mm
Thickness 1000nm+/- 10%
Substrate: sapphire
Orientation C-plane
Orientation Flat A-plane
XRD FWHM of (0002) <200 arcsec.
Useable Surface Area ≥80%
Polishing: None

2″ Gallium Nitride Epitaxy on Sapphire Templates: P-type

Item PAM-GaNT-P
Conduction Type P-type
Dopant Mg doped
Size 2″(50mm) dia.
Thickness 5um
Orientation C-axis(0001)+/-1°
Resistivity(300K) <1Ω·cm or custom
Dopant Concentration 1E17(cm-3) or custom
Substrate Structure GaN on Sapphire(0001)
Surface Finish Single or Double Side Polished,epi-ready
Usable Area ≥ 90 %

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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