GaN HEMT Epitaxial Wafer

GaN HEMT Epitaxial Wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

  • Description

Product Description

4.1 GaN HEMT Material: Available size:2”,4”,6”,8”:

GaN on Si for Power, D-mode

GaN on Si for Power, E-mode

GaN on Si for RF

GaN on Sapphire for Power

GaN on Sapphire for RF

GaN on SiC for RF

GaN on GaN

 

4.2 Now we show you an example as follows:

2″ (50.8mm)GaN HEMT Epitaxial Wafers

We offer 2″(50.8mm) GaN HEMT Wafers, the structure is as follows:

Structure(from top to bottom):

*undoped GaN cap(2~3nm)

AlxGa1-xN (18~40nm)

AlN(buffer layer)

un-doped GaN(2~3um)

Sapphire substrate

* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.

AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

Layer ID Layer Name Material Al Content(%) Dopant Thickness(nm)
0 Substrate GaN or Sapphire
1 Nucleation Layer Various,AlN 100 DID
2 Buffer Layer GaN 0 NID 1800
3 Spacer AlN 100 NID 1
4 Schottky Barrier AlGaN 20 or 23 or 26 NID 21

2″(50.8mm),4″ (100mm)AlGaN/GaN HEMT Epi Wafer on Si

1.1Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GaN)   High Electron Mobility Transistor (HEMT)  on Silicon substrate.

Requirements Specification
AlGaN/GaN HEMT Epi Wafer on Si
AlGaN/GaN HEMT structure Refer 1.2
Substrate Material Silicon
Orientation <111>
Growth method Float Zone
Conduction Type P or N
Size (inch) 2”,4”
Thickness(μm) 625
Backside Rough
Resistivity(Ω-cm) >6000
Bow(μm) ≤ ±35

1.2.Epistructure: Crack-free Epilayers

Layer # Composition Thickness X Dopant Carrier Concentration
5 GaN 2nm
4 AlxGa1–xN 8nm 0.26
3 AlN 1nm Un-doped
2 GaN ≥1000 nm Un-doped
1 Buffer/Transition Layer
Substrate Silicon 350µm/625µm

1.3.Electrical Properties of the AlGaN/GaN HEMT structure

2DEG Mobility (at 300 K)                      :≥1,800 cm2/V.s

2DEG Sheet Carrier Density (at 300 K)  :≥0.9×1013 cm-2

RMS Roughness (AFM)                        : ≤ 0.5 nm (5.0 µm × 5.0 µm scan Area)

2″(50.8mm)AlGaN/GaN on sapphire

For specification of AlGaN/GaN on sapphire template, please contact our sales department: sales@powerwaywafer.com.

Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

Explanation of AlGaN/Al/GaN HEMTs:

Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.

GaN EpitaxialTechnology—-Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:

Related Classification:

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GAN HEMT EPITAXIAL WAFERS (GAN EPI-WAFERS)

 

4.3 GaN Device:

GaN SBD

GaN HEMT

 

4.4 Test Characterization Equipment:

Contactless Sheet Resistance

Laser Thin Film Thickness Mapping

High Temp/High Humidity Reverse Bias

Thermal Shock

DIC Nomarski Microscope

Atomic Force Microscope (AFM)

Surface Defectivity Scan

High Temp Reverse Bias

4PP Sheet Resistance

Contactless Hall Mobility

Temperature Cycle

X-ray Diffraction (XRD)/Reflectance (XRR)

Ellipsometer Thickness

Profilometer

CV Tester

 

4.5 Foundry Fabrication: we also offer foundry fabrication in the following process as follows:

MOCVD Epitaxy

Metal Sputtering/E-Beam

Dry/Wet Metal/Dielectric Etch

Thin Film PECVD/LPCVD/Sputtering

RTA/Furnace Annealing

Photolithography (0.35um min. CD)

Ion Implantation

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