Freestanding GaN substrate

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

  • Description

Product Description

Freestanding GaN substrate

As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer  which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our GaN substrate for III-nitride devices has  low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.

In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly.

Specification of Freestanding GaN substrate

 Here shows detail specification:

4″ N type Si doped GaN(Gallium Nitride) Free-standing Substrate

Item PAM-FS-GaN100-N+
Conduction Type N type/Si doped
Size 4″(100)+/-1mm
Thickness 480+/-50
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (10-10)+/-0.5o
Primary Flat Length 32+/-1mm
Secondary Flat Location (1-210)+/-3o
Secondary Flat Length 16+/-1mm
Resistivity(300K) <0.05Ω·cm
Dislocation Density <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
Surface Finish Front Surface:Ra<=0.3nm.Epi-ready polished
Back Surface:1.Fine ground
2.Polished.
Usable Area ≥ 90 %

 

4″ N type Undoped GaN(Gallium Nitride) Free-standing Substrate

Item PAM-FS-GaN100-N-
Conduction Type N type/undoped
Size 4″(100)+/-1mm
Thickness 480+/-50
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (10-10)+/-0.5o
Primary Flat Length 32+/-1mm
Secondary Flat Location (1-210)+/-3o
Secondary Flat Length 16+/-1mm
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
Surface Finish Front Surface:Ra<=0.3nm.Epi-ready polished
Back Surface:1.Fine ground
2.Polished.
Usable Area ≥ 90 %

 

4″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate

Item PAM-FS-GaN100-SI
Conduction Type Semi-Insulating
Size 4″(100)+/-1mm
Thickness 480+/-50
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (10-10)+/-0.5o
Primary Flat Length 32+/-1mm
Secondary Flat Location (1-210)+/-3o
Secondary Flat Length 16+/-1mm
Resistivity(300K) >10^6Ω·cm
Dislocation Density <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
Surface Finish Front Surface:Ra<=0.3nm.Epi-ready polished
Back Surface:1.Fine ground
2.Polished.
Usable Area ≥ 90 %

 

2″ Si doped GaN(Gallium Nitride) Free-standing Substrate

Item PAM-FS-GaN50-N+
Conduction Type N type/Si doped
Size 2″(50.8)+/-1mm
Thickness 400+/-50
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (10-10)+/-0.5o
Primary Flat Length 16+/-1mm
Secondary Flat Location (1-210)+/-3o
Secondary Flat Length 8+/-1mm
Resistivity(300K) <0.05Ω·cm
Dislocation Density <5x106cm-2
FWHM <=100arc.sec
TTV <=15um
BOW <=+/-20um
Surface Finish Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                    2.Polished.
Usable Area  ≥ 90 % 


 

2″ Undoped GaN(Gallium Nitride) Free-standing Substrate

Item PAM-FS-GaN50-N-
Conduction Type N type/undoped
Size 2″(50.8)+/-1mm
Thickness 400+/-50
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (10-10)+/-0.5o
Primary Flat Length 16+/-1mm
Secondary Flat Location (1-210)+/-3o
Secondary Flat Length 8+/-1mm
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5x106cm-2
FWHM <=100arc.sec
TTV <=15um
BOW <=+/-20um
Surface Finish Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                      2.Polished.
Usable Area  ≥ 90 % 


 

2″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate

Item PAM-FS-GaN50-SI
Conduction Type Semi-Insulating
Size 2″(50.8)+/-1mm
Thickness 400+/-50
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (10-10)+/-0.5o
Primary Flat Length 16+/-1mm
Secondary Flat Location (1-210)+/-3o
Secondary Flat Length 8+/-1mm
Resistivity(300K) >10^6Ω·cm
Dislocation Density <5x106cm-2
FWHM <=100arc.sec
TTV <=15um
BOW <=+/-20um
Surface Finish Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                      2.Polished.
Usable Area  ≥ 90 % 

15mm,10mm,5mm Free-standing GaN Substrate

Item PAM-FS-GaN15-N PAM-FS-GaN15-SI
PAM-FS-GaN10-N PAM-FS-GaN10-SI
PAM-FS-GaN5-N PAM-FS-GaN5-SI
Conduction Type N-type Semi-insulating
Size 14.0mm*15mm   10.0mm*10.5mm   5.0*5.5mm
Thickness 330-450um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location  
Primary Flat Length  
Secondary Flat Location  
Secondary Flat Length  
Resistivity(300K) <0.5Ω·cm >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density 0cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
                    Back Surface:1.Fine ground
                                  2.Rough grinded
Usable Area ≥ 90 %


            

Note:

Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate

Application of GaN Substrate

Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting  

DVD Storage: Blue laser diodes

Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites


Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth

Wireless Base Stations: RF power transistors

Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs

Pressure Sensors:MEMS

Heat Sensors: Pyro-electric detectors

Power Conditioning: Mixed signal GaN/Si Integration

Automotive Electronics: High temperature electronics

Power Transmission Lines: High voltage electronics

Frame Sensors: UV detectors

Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important    new applications and growth market for GaN substrate wafers.

Ideal for HEMTs, FETs

   GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.
   Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.
We will offer test reports, please see below an example:

You may also like…