VCSEL Laser Wafer Chip
PAM-XIAMEN offer 850 nm,850nm and 940nm VCSEL(vertical-cavity surface-emitting laser) epitaxial wafer for the tele communication, gesture recognition,3D imaging and other applications, which is grown by MOCVD by with GaAs/AlGaAs multiple quantum wells (MQWs) as the active layer.
We have three items: VCSEL [...]
2020-04-23meta-author
New InGaAs Structure Wafer
Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a [...]
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrate (100)
BaTiO3 (100) 10×3 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.15 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 2SP [...]
2019-04-17meta-author
Lithium niobate (LiNbO3) is a compound of niobium, lithium, and oxygen. Its single crystals are an important material for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and non-linear optical applications.Single crystals of lithium niobate can be grown using the [...]
2019-02-28meta-author
Transmitance-GaN material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5度),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um，warp [...]
2019-07-03meta-author
