GaN Wafers to Fabricate LED Devices

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GaN Wafers to Fabricate LED Devices

PAM-XIAMEN offers GaN Wafers to Fabricate LED Devices, which is GaN Epi Structure with InGaN MQWs on sapphire substrate, and can be blue or green emission:

Specification of GaN Wafers for LED Devices PAM200614-GAN-LED

size : 2 inch
WD : 455 ± 10nm
brightness : > 90mcd
VF : < 3.3V
n-GaN Thickness : <4.1㎛
u-GaN thickness : <2.2㎛
substrate : patterned sapphire substrate (PSS)
without p-roughness
without ITO
Single-side polished
Structure of GaN Wafers for LED Devices

p-GaN  Mesa Etching Depth: ~10,000A
InGaN MQWs
ESD protection Layer ( -06 μm) —
n-GaN (~4 μm) —
u-GaN (~2 μm) —
Sapphire ( 430 μm) —

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-06-02

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