Si-doped GaN Epitaxial template on sapphire

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie,including Si-doped GaN Epitaxial template on sapphire:

GaN Template2″	Specification
Purity	Si-doped GaN Epitaxial template on sapphire
Orientation	-1
Film thickness	>5.0µm ± 0.25µm
Diameter	50.8 ± 0.1mm
Edge exclusion	<1mm
Useable surface area	> 90%
Conduction Type	N-Type
Resisitivity	0.001 – 0.01 Ohm-cm
Carrier Concentration	1E19 /cc
Macro Defect	≤ 10 / cm-2
Dislocation Density	< 5E8 / cm2
FWHM of RC for the symmetric (002) reflection	~ 250 arcsec
FWHM of RC for the symmetric (102) reflection	~ 300 arcsec
Surface Finish / Polish	RMS <0.5nm by AFM 10µmX10µm scan
As -Grown	Ga Face
Substrate	Sapphire
(0001) miscut	0.2 deg ± 0.1 deg toward M plane
Thickness of Sapphire	430µm ± 25µm
TTV	≤ 10µm
BOW	≤ 10µm
Warp	≤ 10µm
Polish	One side polished (1sp) with the condition of backsurface is “as-received)

Following is AFM image of GaN Coating on Sapphire:

AFM image of GaN Coating on Sapphire

AFM of GaN Epitaxial Template on Sapphire

We also offer custom structure of epitaxial GaN coated sapphire substrates, please see below example:

n-type GaN thin films on c-Al2O3 substrates.
Material: n-type GaN thin film (thickness:1um).
Substrates: c-Al2O3
Size: 2” inch diameter
Electrical resistivity: <0.05 ohm.cm
single side polished.

Source:PAM-XIAMEN

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

2014-06-19 Si-doped GaN Epitaxial template on sapphire

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