Si-doped GaN Epitaxial template on sapphire

Si-doped GaN Epitaxial template on sapphire 

 

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie,including Si-doped GaN Epitaxial template on sapphire:

 

GaN Template2″ Specification
Purity Si-doped GaN Epitaxial template on sapphire
Orientation -1
Film thickness >5.0µm ± 0.25µm
Diameter 50.8 ± 0.1mm
Edge exclusion <1mm
Useable surface area > 90%
Conduction Type N-Type
Resisitivity 0.001 – 0.01 Ohm-cm
Carrier Concentration 1E19 /cc
Macro Defect ≤ 10 / cm-2
Dislocation Density < 5E8 / cm2
FWHM of RC for the symmetric (002) reflection ~ 250 arcsec
FWHM of RC for the symmetric (102) reflection ~ 300 arcsec
Surface Finish / Polish RMS <0.5nm by AFM 10µmX10µm scan
As -Grown Ga Face
Substrate Sapphire
(0001) miscut 0.2 deg ± 0.1 deg toward M plane
Thickness of Sapphire 430µm ± 25µm
TTV ≤ 10µm
BOW ≤ 10µm
Warp ≤ 10µm
Polish One side polished (1sp) with the condition of backsurface is “as-received)

 

 

We also offer custom structure, please see below example:

n-type GaN thin films on c-Al2O3 substrates.
Material: n-type GaN thin film (thickness:1um).
Substrates: c-Al2O3
Size: 2” inch diameter
Electrical resistivity: <0.05 ohm.cm
single side polished.

Source:PAM-XIAMEN

If you need more information about GaN template on sapphire,please send us email at victorchan@powerwaywafer.com or powerwaymaterial@gmail.com.

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