Si-doped GaN Epitaxial template on sapphire

Si-doped GaN Epitaxial template on sapphire

Si-doped GaN Epitaxial template on sapphire 

 

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie,including Si-doped GaN Epitaxial template on sapphire:

 

GaN Template2″Specification
PuritySi-doped GaN Epitaxial template on sapphire
Orientation-1
Film thickness>5.0µm ± 0.25µm
Diameter50.8 ± 0.1mm
Edge exclusion<1mm
Useable surface area> 90%
Conduction TypeN-Type
Resisitivity0.001 – 0.01 Ohm-cm
Carrier Concentration1E19 /cc
Macro Defect≤ 10 / cm-2
Dislocation Density< 5E8 / cm2
FWHM of RC for the symmetric (002) reflection~ 250 arcsec
FWHM of RC for the symmetric (102) reflection~ 300 arcsec
Surface Finish / PolishRMS <0.5nm by AFM 10µmX10µm scan
As -GrownGa Face
SubstrateSapphire
(0001) miscut0.2 deg ± 0.1 deg toward M plane
Thickness of Sapphire430µm ± 25µm
TTV≤ 10µm
BOW≤ 10µm
Warp≤ 10µm
PolishOne side polished (1sp) with the condition of backsurface is “as-received)

 

 

We also offer custom structure, please see below example:

n-type GaN thin films on c-Al2O3 substrates.
Material: n-type GaN thin film (thickness:1um).
Substrates: c-Al2O3
Size: 2” inch diameter
Electrical resistivity: <0.05 ohm.cm
single side polished.

Source:PAM-XIAMEN

If you need more information about GaN template on sapphire,please send us email at [email protected] or [email protected].

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