GaP Substrate-1

GaP Substrate-1

PAM XIAMEN offers GaP Substrate (100) .

GaP (100) undoped

GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp
GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp, R: 1.5×10^14 ohm.cm, Semi-Insulating
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp,R: 4.2×10^7-4×10^9 ohm.cm ,Semi-Insulating
GaP wafer undoped (100) 2″ diaX 0.45mm 2sp,R: (3.×10^13-6.9×10^14 )ohm.cm,Semi-Insulating

GaP (100) S-doped

GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp
GaP wafer, S doped, (100), 2″ dia x 0.5 mm, 1sp
GaP wafer, S doped, (100), 2″ dia x 0.50 mm, 2sp
GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp

GaP (100) Zn-doped

GaP wafer, Zn doped, P type, (100), 2″ dia x 0.45 mm, 1sp (carrier conc.: 5.2E17/cc)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-04-22

Share this post

Related Posts

X-ray response of polycrystalline – CdZnTe

X-ray response of polycrystalline – CdZnTe X-ray response of polycrystalline-CdZnTe deposited by thermal evaporation were measured by signal to noise(S/N) analysis. The CdZnTe material has optimal property adquem in solid state X-ray detector and many research presented on single crystal CdZnTe with small sized silicon [...]

2014-03-21meta-author
Metal Impurity Content Identified in Mono and Polycrystalline Silicon Crystals

The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and metal impurity such as iron, aluminum, copper, nickel, and titanium. Metal impurities generally exist in interstitial states, substitution states, complexes or precipitations in crystalline silicon, [...]

2022-09-27meta-author
Layer structure of 703nm Laser

Layer structure of 703nm Laser   We can offer Layer structure of 703nm Laser as follows:   Layer Composition Thickness (um) Doping(cm-3) Cap P+- GaAs 0.2 Zn:>1e19 Cladding p – Al0.8Ga0.2As 1 Zn:1e18 Etch stop GaInP 0.008 Zn:1e18 Top barrier Al0.45Ga0.55As 0.09 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Bottom barrier Al0.45Ga0.55As 0.09 Undoped Cladding n – Al0.8Ga0.2As 1.4 Si:1e18 Buffer n – GaAs 0.5 Si:1e18 Substrate n+ – GaAs   S :>1e18   Source:PAM-XIAMEN   For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com.

2015-02-02meta-author , ,
GaN Epitaxial Growth on Sapphire for LED

The global demand for ultra-bright blue and green LEDs has driven the development of LED nitride wafer technologies. Among them, sapphire substrate is currently the most common substrate material in GaN epitaxial growth, and it is also the substrate of epitaxial GaN material with [...]

2022-03-25meta-author
GaN Epitaxy Template on Sapphire

GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]

2019-04-22meta-author
PAM-XIAMEN Offers AlGaN–GaN HEMTs Grown on Sapphire Substrates

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″/4” size AlGaN–GaN HEMTs Grown on Sapphire Substrates,which is on mass production [...]

2014-08-15meta-author , ,