GaP Wafer
- Description
Product Description
PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single gallium phosphide crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. Gallium phosphide wafers by doping sulfur or tellurium can produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor. Gallium phosphide wafer has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR). Gallium phosphide single crystal is the main substrate material for the preparation of red, green, yellow and orange visible light LEDs.
| Specs of GaP Wafer and Substrate | |
| Conducion Type | N-type |
| Dopant | S doped |
| Wafer Diameter | 50.8+/-0.5mm |
| Crystal Orientation | (111)+/-0.5° |
| Flat orientation | 111 |
| Flat length | 17.5+/-2mm |
| Carrier Concentration | (2-7)x10^7/cm3 |
| Resistivity at RT | 0.05-0.4ohm.cm |
| Mobility | ＞100cm²/V.sec |
| Etch Pit Density | ＜3*10^5/cm² |
| Laser Marking | upon request |
| Suface Fnish | P/E |
| Thickness | 250+/-20um |
| Epi Ready | Yes |
| Package | Single wafer container or cassette |
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