GaP Wafer – Can’t Offer Temporarily

GaSb Wafer GaSb Wafer
GaP Wafer
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GaP Wafer
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GaP Wafer – Can’t Offer Temporarily

PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
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  • Description

Product Description

PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single gallium phosphide crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. Gallium phosphide wafers by doping sulfur or tellurium can produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor. Gallium phosphide wafer has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR). Gallium phosphide single crystal is the main substrate material for the preparation of red, green, yellow and orange visible light LEDs.

Specs of GaP Wafer and Substrate
Conducion Type N-type
Dopant S doped
Wafer Diameter 50.8+/-0.5mm
Crystal Orientation (111)+/-0.5°
Flat orientation 111
Flat length 17.5+/-2mm
Carrier Concentration (2-7)x10^7/cm3
Resistivity at RT 0.05-0.4ohm.cm
Mobility ＞100cm²/V.sec
Etch Pit Density ＜3*10^5/cm²
Laser Marking upon request
Suface Fnish P/E
Thickness 250+/-20um
Epi Ready Yes
Package Single wafer container or cassette
 
In order to reduce GaP wafer defects, the solute synthesis diffusion method can be used for crystal growth, but the growth rate is slow and it is difficult to obtain large crystals. Currently, epitaxially grown films are mostly used in gallium phosphide device fabrication.
Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

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