GASB GALLIUM ANTIMONIDE CRYSTAL SUBSTRATES

PAM XIAMEN offers GaSb Gallium Antimonide Crystal Substrates.

                                                                      Main Parameters
Single crystal Dopant Conductivity type Carrier concentration Mobility
(cm2/V.s)
Dislocation density(cm-2) Standard substrate
cm-3
GaSb /    P (1-2)*10^17 600-700 <1*10^4 Φ2″×0.5mm
Φ3″×0.5mm
GaSb Zn   P (5-100)*10^17 200-500 <1*10^4 Φ2″×0.5mm
Φ3″×0.5mm
GaSb Te   N (1-20)´10^17 2000-3500 <1*10^4 Φ2″×0.5mm
Φ3″×0.5mm
dimension (mm) Diameter 50.8×0.5mm, 10×10×0.5mm, 10×5×0.5mm
Surface roughness Surface roughness(Ra): <= 5A
Polishing One side or double side polished

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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