GaSb( Gallium Antimonide) wafer

GaSb( Gallium Antimonide) wafer

PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots.

We have round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality.

GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth .

We have “epi ready ” GaSb products with wide choice in exact or off orientation , low or high doped concentration and good surface finish . Please contact us for more product information.

1)2″,3″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth Method:CZ
Polish:SSP

2)2″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:N/undoped;P/Te
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500
Growth Method:LEC
Polish:SSP

3)2″GaSb wafer
Orientation:(111)A±0.5°
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

4)2″GaSb wafer
Orientation:(111)B±0.5°
Thickness(μm):500±25;450±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

5)2″GaSb wafer
Orientation:(111)B 2deg.off
Thickness(μm):500±25
Type/Dopant:N/Te;P/Zn
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500;200~500
Growth Method:LEC
Polish:SSP

Relative products:
InAs wafer
InSb wafer
InP wafer
GaAs wafer
GaSb wafer
GaP wafer

Gallium Antimonide (GaSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.

GaSb material presents interesting properties for single junction thermophotovoltaic (TPV) devices. GaSb: Te single crystal grown with Czochralski (Cz) or modified Czo- chralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the bulk crystal, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk crystal growth, the wafer preparation, and the wafer etching. Subsequent steps after these are related to the p / no r n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process we report some material specificity.

If you are more interesting in insb wafer,Please send emails to us;sales@powerwaywafer.com,and visit our website:www.powerwaywafer.com.

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