Ge single crystal(Prime grade)-3

Ge single crystal(Prime grade)-3

PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers (100).

2″ Diameter Wafer

2″ wafers (100)

2“ Undoped Ge (100)

Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, 1SP, resistivities: >50 ohm-cm
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP

2” N Type Ge (100)

Ge Wafer (100) 2″ dia x 0.5 mm, 1SP, N type (Sb doped), resistivity:2.5-2.7ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 1-5 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, N type ( Sb doped), R:>40 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, N type (Sb doped), resistivities: 0.01-0.1 ohm-cm
Ge Wafer (100) +/- 1 degree, 2″ dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm
Ge Wafer (100) +/- 2 degree , 2″ dia x 0.5 mm, 1SP, N type (Sb doped), R:0.1-0.5 ohm.cm
Ge Wafer (100) +/- 3 degree , 2″ dia x 0.5 mm, 1SP, N type ( Sb doped), R:0.1-0.5 ohm.cm
Ge Wafer (100) 2″ dia x 0.5 mm, 1SP, N type ( Sb doped), R:>40 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities:0.01-0.1 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 1SP, N type ( Sb doped), Resistivities: 0.001-0.01 ohm-cm

2“ P Type Ge (100)

Ge Wafer (100) 2″ dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.0007-0.002 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.005-0.009 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 1SP, P type ( Ga doped), resistivity: 0.01-0.1 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, P type ( Ga doped), resistivities: 0.1-0.5ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, P type ( Ga doped), resistivities: 0.14-0.23 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, P type ( Ga doped), resistivities: 0.23-0.24ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, P type ( Ga doped), resistivities: 1 – 10 ohm-cm
Ge Wafer (100) 2″ dia x 0.5 mm, 2SP, P type ( Ga doped), resistivity: 0.001-0.005 ohm-cm
Ge Wafer (100)+/- 2 degree , 2″” dia x 0.5 mm, 2SP, P type ( Ga doped), resistivities: 10-15 ohm-cm”
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm
Ge Wafer (100) 2″ dia x 0.4 mm, 2SP, P type ( Ga doped), resistivities: 0.1ohm-cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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