Ge single crystal(Prime grade)-5

PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(110).

2″ Diameter Wafer

2″ wafers(110)

Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.1-0.5 ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.82-0.98ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 1-5ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 2SP Resistivity: 1-5ohm.cm
Ge Wafer (110) Ga-doped, 2″ dia x 0.5 mm, 1SP Resistivity : 0.1-0.5 ohm-cm
Ge Wafer (110) Ga-doped, 2″ dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm
Ge Wafer (110) Ga-doped, 2″ dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm
Ge Wafer (110) Ga-doped, 2″ dia x 0.5 mm, 2SP Resistivity : 1-5 ohm-cm
Ge Wafer (110) Undoped, 2″ dia x 0.5 mm, 1SP, R:>50 ohm.cm
Ge Wafer (110) Undoped, 2″ dia x 0.5 mm, 2SP,R:>50 ohm.cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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