Ge single crystal(Prime grade)-8

Ge single crystal(Prime grade)-8

PAM XIAMEN offers 4″ Diameter Wafer.

4″ Diameter Wafer

Ge N-type 4” ,undoped

Ge Wafer (111) 4″ dia x 0.5 mm, 1SP, N type ( un- doped)
Ge Wafer (100) . Undoped, 4″ dia x 0.5 mm, 1SP
Ge Wafer (100) . Undoped, 4″ dia x 0.5 mm, 2SP, R>50 ohm-cm
Ge Wafer (110) . Undoped, 4″ dia x 0.5 mm, 1SP,R:>50 ohm.cm
Ge Wafer (110) . Undoped, 4″ dia x 0.5 mm, 2SP,R:>50 ohm.cm
Ge Wafer (111) 4″ dia x 0.5 mm, 2SP, N type ( un- doped)

Ge P-type 4“ Ga-doped

Ge Wafer (100) 100 dia x 0.5 mm, 1SP P type ( Ga doped) R:1-5 ohm.cm
Ge Wafer(100) . 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R: 0.004-0.01ohm.cm
Ge Wafer(100) . 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:1.4-1.7 ohm.cm
VGF-Ge Wafer (100) with 6 degree miscut toward <111> ,100 mmdia x 0.5 mm, 1SP, P type ( Ga doped) R: 0.296-0.326 Ohm.cm
VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm
VGF-Ge Wafer(100) . 100mm dia x 0.4 mm, 2SP, P type ( Ga doped) R:0.0038-0.0158 Ohm.cm
VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.279-0.324 Ohm.cm
VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm
VGF-Ge Wafer(100) 100 mmdia x 0.5 mm, 1SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm

Ge,N-type ,4” Sb & As -doped

Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( Sb doped) R:2.5-2.7 ohm.cm
Ge Wafer (100)with major flat<110> 100mm dia x 0.5 mm, 1SP, N type ( Sb doped) R:0.1-0.5 ohm.cm
Ge Wafer (110) 4″ dia x 0.5 mm,2SP, N type ( Sb doped) R:0.1-0.5ohm.cm
Ge Wafer (110) 4″ dia x 0.5 mm,2SP, N type ( Sb doped) R:1-5 ohm.cm
Ge Wafer (110) 4″ dia x 0.5 mm,1SP, N type ( Sb doped) R:1-5 ohm.cm
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.214 – 0.250 ohm.cm
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm
Ge Wafer (111) 4″ dia x 0.5 mm, 1SP, N type ( Sb- doped) with resistivities: 0.014-0.022 Ohms-cm
Ge Wafer (111) 4″ dia x 0.5 mm, 2SP, N type ( Sb- doped)with resistivities: 0.014-0.022 Ohms-cm
Ge Wafer (100) with flat (100) 4″ dia x 0.5 mm, 1SP, N type ( Sb doped) Resistivities: 0.1-0.5 ohm-cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

Share this post