Ge Wafer Substrate-Germanium
Quantity	Material	Orientation.	Diameter	Thickness	Polish	Resistivity	Type   Dopant	Prime flat	EPD	Ra
PCS			(mm)	(μm)		Ω·cm		Orientation	/cm2
1-100	Ge	(100)	50.8	500±25	SSP	0.0138-0.02	P/Ga	(110)	≤5000	N/A
1-100	Ge	(100)	50.8	500	SSP	≥30	N/undoped	N/A	N/A	<5A
1-100	Ge	(100)	50.8	500	SSP	58.4-63.4	N/undoped	N/A	N/A	N/A
1-100	Ge	(100)	50.8	500	SSP	0.1-1	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	50.8	500	SSP	0.1-0.05	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	50.8	1000	DSP	>30	N/A	(110)	N/A	N/A
1-100	Ge	(100)	50.8	2000	SSP	N/A	N/A	N/A	N/A	N/A
1-100	Ge	(100)	50.8	4000	SSP	N/A	N/A	N/A	N/A	N/A
1-100	Ge	(111)/(110)	50.8	200000	N/A	5-20	N/A	N/A	N/A	N/A
1-100	Ge	(100)	50.8	400	SSP	<0.4	N/A	N/A	N/A	N/A
1-100	Ge	(100)/(111)	50.8	4000±10	DSP	N/A	N/A	N/A	N/A	N/A
1-100	Ge	(100)	50.8	350	SSP	1-10	P/Ga	(110)	≤5000	N/A
1-100	Ge	(100)	50.8	500±25	SSP	2-10	P/Ga	(110)	≤5000	N/A
1-100	Ge	(100)	50.8	500±25	SSP	0.3-3	N/Sb	(110)	≤5000	N/A
1-100	Ge	(100)	50.8	500±25	SSP	0.3-3	P/Ga	(110)	≤5000	N/A
1-100	Ge	(111)	60	1000	As cut	>30	N/A	(110)	<3000	N/A
1-100	Ge	(100)	100	N/A	SSP	<0.019	P/Ga	(110)	<500	N/A
1-100	Ge	(100)	100	1000±25	SSP	≥30	N/undoped	N/A	N/A	N/A
1-100	Ge	(100) off 6°or off 9°	100	500	SSP	0.01-0.05	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	100	500	SSP	0.01-0.05	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	100	500	DSP	0.01-0.05	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	100	500	SSP	<0.01	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	100	500	DSP	<0.01	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	100	500	SSP	≥35	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	100	500	DSP	≥35	P/Ga	N/A	N/A	N/A
1-100	Ge	(100)	100	500	SSP	0.1-0.05	P/Ga	N/A	N/A	<5A
1-100	Ge	(100)	100	500	DSP	0.1-0.05	P/Ga	N/A	N/A	<5A
1-100	Ge	(100)6°off (111)	100	185±15	DSP	0.01-0.05	N/A	(110)	≤5000	<5A
1-100	Ge	(100)6°off (110)	100	525±25	SSP	0.01-0.04	N/A	N/A	N/A	N/A
1-100	Ge	(100)	100	N/A	N/A	N/A	N/A	N/A	N/A	N/A
1-100	Ge	(100)	100	1000±15	SSP	≥30	N/A	(110)	≤5000	N/A
1-100	Ge	(100)	100	750±25	SSP	≥30	N/A	(110)	≤5000	N/A
1-100	Ge	(100)	100	500±25	SSP	10-30	N/A	N/A	N/A	N/A
1-100	Ge	(100)/(111)	100	160	DSP	0.05-0.1	P/Ga	N/A	<500	N/A
1-100	Ge	(100)/(111)	100	160	DSP	0.05-0.1	P/Ga	N/A	<4000	N/A
1-100	Ge	(100)/(111)	100	160	DSP	0.05-0.1	N/Sb	N/A	<500	N/A
1-100	Ge	(100)/(111)	100	160	DSP	0.05-0.1	N/Sb	N/A	<4000	N/A
1-100	Ge	(100)/(111)	100	190	DSP	0.05-0.1	P/Ga	N/A	<500	N/A
1-100	Ge	(100)/(111)	100	190	DSP	0.05-0.1	P/Ga	N/A	<4000	N/A
1-100	Ge	(111)	100	500±25	SSP	<0.4	N/Sb	N/A	N/A	N/A
1-100	Ge	(100)6°off-cut toward(111)A	100	175±25	SSP	0.003-0.009	P/Ga	(0-1-1) (0-11)	<100	N/A
1-100	Ge	(310)±0.1°	100	200±15	DSP	>20	N/A	N/A	N/A	N/A
1-100	Ge	(111)	150	600-700	N/A	>30	N/A	(110)	N/A	N/A

Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial orientation. Take the Ge(310) for example:

Ge wafers, PAM210611-GE

Size: 4”diameter

Intrinsic undoped

Orientation：（310）+/-0.1deg.

Resistivity:>30 ohm.cm

TTV<3um

BOW<10um

WARP<10um

SEMI Prime grade

Double side polished

One SEMI Flat

Sealed in Individual Wafer

 

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
*** For solar cell application, normally user will choose Ge wafer with (100) off 6°or off 9°in 175um+/-25um thickness,EPD<500/cm2 or 5000/cm2.

For more information, please contact us email at [email protected] and [email protected].