Ge Wafer Supplier

Ge Wafer Supplier

Ge Wafer Substrate-Germanium
No. Material Orientation. Diameter Thickness Polish Resistivity Type   Dopant Prime flat EPD Ra
(mm) (μm) Ω·cm   Orientation /cm2  
1-100 Ge (100) 50.8 500±25 SSP 0.0138-0.02 P/Ga (110) ≤5000 N/A
1-100 Ge (100) 50.8 500 SSP ≥30 N/undoped N/A N/A <5A
1-100 Ge (100) 50.8 500 SSP 58.4-63.4 N/undoped N/A N/A N/A
1-100 Ge (100) 50.8 500 SSP 0.1-1 P/Ga N/A N/A N/A
1-100 Ge (100) 50.8 500 SSP 0.1-0.05 P/Ga N/A N/A N/A
1-100 Ge (100) 50.8 1000 DSP >30 N/A (110) N/A N/A
1-100 Ge (100) 50.8 2000 SSP N/A N/A N/A N/A N/A
1-100 Ge (100) 50.8 4000 SSP N/A N/A N/A N/A N/A
1-100 Ge (111)/(110) 50.8 200000 N/A 5-20 N/A N/A N/A N/A
1-100 Ge (100) 50.8 400 SSP <0.4 N/A N/A N/A N/A
1-100 Ge (100)/(111) 50.8 4000±10 DSP N/A N/A N/A N/A N/A
1-100 Ge (100) 50.8 350 SSP 1-10 P/Ga (110) ≤5000 N/A
PAMP20295 Ge (100) 50.8 500±25 SSP 2-10 P/Ga (110) ≤5000 N/A
1-100 Ge (100) 50.8 500±25 SSP 0.3-3 N/Sb (110) ≤5000 N/A
1-100 Ge (100) 50.8 500±25 SSP 0.3-3 P/Ga (110) ≤5000 N/A
1-100 Ge (111) 60 1000 As cut >30 N/A (110) <3000 N/A
1-100 Ge (100) 100 N/A SSP <0.019 P/Ga (110) <500 N/A
1-100 Ge (100) 100 1000±25 SSP ≥30 N/undoped N/A N/A N/A
1-100 Ge (100) off 6°or off 9° 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A
1-100 Ge (100) 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A
1-100 Ge (100) 100 500 DSP 0.01-0.05 P/Ga N/A N/A N/A
1-100 Ge (100) 100 500 SSP <0.01 P/Ga N/A N/A N/A
1-100 Ge (100) 100 500 DSP <0.01 P/Ga N/A N/A N/A
1-100 Ge (100) 100 500 SSP ≥35 P/Ga N/A N/A N/A
1-100 Ge (100) 100 500 DSP ≥35 P/Ga N/A N/A N/A
1-100 Ge (100) 100 500 SSP 0.1-0.05 P/Ga N/A N/A <5A
1-100 Ge (100) 100 500 DSP 0.1-0.05 P/Ga N/A N/A <5A
1-100 Ge (100)6°off (111) 100 185±15 DSP 0.01-0.05 N/A (110) ≤5000 <5A
1-100 Ge (100)6°off (110) 100 525±25 SSP 0.01-0.04 N/A N/A N/A N/A
1-100 Ge (100) 100 N/A N/A N/A N/A N/A N/A N/A
1-100 Ge (100) 100 1000±15 SSP ≥30 N/A (110) ≤5000 N/A
1-100 Ge (100) 100 750±25 SSP ≥30 N/A (110) ≤5000 N/A
1-100 Ge (100) 100 500±25 SSP 10-30 N/A N/A N/A N/A
1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <500 N/A
1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <4000 N/A
1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <500 N/A
1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <4000 N/A
1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <500 N/A
1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <4000 N/A
1-100 Ge (111) 100 500±25 SSP <0.4 N/Sb N/A N/A N/A
1-100 Ge (100)6°off-cut toward(111)A 100 175±25 SSP 0.003-0.009 P/Ga (0-1-1) (0-11) <100 N/A
PAM210802 Ge (100) 100 175 DSP <0.02 P N/A N/A N/A
1-100 Ge (310)±0.1° 100 200±15 DSP >20 N/A N/A N/A N/A
1-100 Ge (111) 150 600-700 N/A >30 N/A (110) N/A N/A

 

Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial orientation. Take the Ge(310) for example:

Ge wafers, PAM210611-GE

Size: 4”diameter

Intrinsic undoped

Orientation：（310）+/-0.1deg.

Resistivity:>30 ohm.cm

TTV<3um

BOW<10um

WARP<10um

SEMI Prime grade

Double side polished

One SEMI Flat

Sealed in Individual Wafer

 

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
*** For solar cell application, normally user will choose Ge wafer with (100) off 6°or off 9°in 175um+/-25um thickness,EPD<500/cm2 or 5000/cm2.

For more information, please contact us email at [email protected] and [email protected].

2018-05-23

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Silicon Carbide List   4″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　  N-Type  S4H-100-N-SIC-350-A 4″ 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-100-N-SIC-350-B 4″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-100-N-SIC-350-D 4″ 4H-N 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% S4H-100-N-SIC-370-L 4″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-100-N-SIC-440-AC 4″ 4H-N 0°/4°±0.5° 440±25um D * As-cut >75% S4H-100-N-SIC-C0510-AC-D 4″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * 3″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　          N-Type  S4H-76-N-SIC-350-A 3″ 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-76-N-SIC-350-B 3″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-N-SIC-350-D 3″ 4H-N 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% S4H-76-N-SIC-370-L 3″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-76-N-SIC-410-AC 3″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-76-N-SIC-C0510-AC-D 3″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-76-N-SIC-C1015-AC-D 3″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S4H-76-N-SIC-C0510-AC-C 3″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S4H-76-N-SIC-C1015-AC-C 3″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 　 SEMI-INSULATING  S4H-76-SI-SIC-350-A 3″ 4H-SI 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-76-SI-SIC-350-B 3″ 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-SI-SIC-350-D 3″ 4H-SI 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% 2″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　 N-Type  S4H-51-N-SIC-330-A 2″ 4H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S4H-51-N-SIC-330-B 2″ 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S4H-51-N-SIC-330-D 2″ 4H-N 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S4H-51-N-SIC-370-L 2″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-51-N-SIC-410-AC 2″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-51-N-SIC-C0510-AC-D 2″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-51-N-SIC-C1015-AC-D 2″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S4H-51-N-SIC-C0510-AC-C 2″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S4H-51-N-SIC-C1015-AC-C 2″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 2″ 6H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　 N-Type  S6H-51-N-SIC-330-A 2″ 6H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S6H-51-N-SIC-330-B 2″ 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-N-SIC-330-D 2″ 6H-N 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S6H-51-N-SIC-370-L 2″ 6H-N 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-N-SIC-410-AC 2″ 6H-N 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-N-SIC-C0510-AC-D 2″ 6H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S6H-51-N-SIC-C1015-AC-D 2″ 6H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S6H-51-N-SIC-C0510-AC-C 2″ 6H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S6H-51-N-SIC-C1015-AC-C 2″ 6H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 　 SEMI-INSULATING  S6H-51-SI-SIC-330-A 2″ 6H-SI 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S6H-51-SI-SIC-330-B 2″ 6H-SI 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-SI-SIC-330-D 2″ 6H-SI 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S6H-51-SI-SIC-370-L 2″ 6H-SI 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-SI-SIC-410-AC 2″ 6H-SI 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-SI-SIC-C0510-AC-D 2″ 6H-SI 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S6H-51-SI-SIC-C1015-AC-D 2″ 6H-SI 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * Please see below sub-catalogue: 6H n type SiC 4H N Type SiC 4H Semi-insulating SiC SiC Ingots Lapped Wafers Polishing Wafer As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team. Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.  

2018-05-23meta-author