Ge(Germanium) Single Crystals and Wafers

PAM XIAMEN offers Ge(Germanium) Single Crystals and Wafers.

General Properties Structure Cubic, a = 5.6754 Å
Density: 5.765 g/cm3
Melting Point: 937.4 oC
Thermal Conductivity: 640
Crystal Growth Technology Czochralski


Doping available Undoped Sb Doping Doping In or Ga
Conductive Type / N P
Resistivity, cm-1 >35 < 0.05 0.05 – 0.1
EPD < 4×10^3/cm2 < 4×10^3/cm2 < 4×10^3/cm2

Crystal Grades and Application

(please specify when you order) Electronic Grade Used for diodes and transistors
Infrared Grade Used for IR optical window
Cell Grade Used for substrates of solar cell

Standard Specs of Ge Crystal and wafers

Crystal Orientation <111>,<100> and <110> ± 0.5o or custom orientation
Crystal boule as grown 1″ ~ 5″ diameter x 200 mm Length
Standard blank as cut 1″x 0.5mm 2″x0.6mm 4″x0.7mm 5″&6″x0.8mm
Standard Polished wafer(One/two sides polished) 1″x 0.30 mm 2″x0.5mm 4″x0.5mm 5″&6″x0.6mm

Special size and orientation are available upon requested Wafers

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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