PAM XIAMEN offers Ge(Germanium) Single Crystals and Wafers.
| General Properties Structure | Cubic, a = 5.6754 Å Density: 5.765 g/cm3 Melting Point: 937.4 oC Thermal Conductivity: 640 |
| Crystal Growth Technology | Czochralski |
| Doping available | Undoped | Sb Doping | Doping In or Ga |
| Conductive Type | / | N | P |
| Resistivity, cm－1 | >35 | < 0.05 | 0.05 – 0.1 |
| EPD | < 4×10^3/cm2 | < 4×10^3/cm2 | < 4×10^3/cm2 |
Crystal Grades and Application
| (please specify when you order) Electronic Grade | Used for diodes and transistors |
| Infrared Grade | Used for IR optical window |
| Cell Grade | Used for substrates of solar cell |
Standard Specs of Ge Crystal and wafers
| Crystal Orientation | <111>,<100> and <110> ± 0.5o or custom orientation | |||
| Crystal boule as grown | 1″ ~ 5″ diameter x 200 mm Length | |||
| Standard blank as cut | 1″x 0.5mm | 2″x0.6mm | 4″x0.7mm | 5″&6″x0.8mm |
| Standard Polished wafer(One/two sides polished) | 1″x 0.30 mm | 2″x0.5mm | 4″x0.5mm | 5″&6″x0.6mm |
Special size and orientation are available upon requested Wafers
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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