Graphene film on Ni/SiO2/Si

PAM XIAMEN offers Ge epi-film on Si.

Graphene film on Ni/SiO2/Si 100mm dia,

Graphene™ films are grown directly on a Ni/SiO2/Si deposited on an oxidized silicon wafer usinga CVD process.

Specifications: 
Wafer Size: 100 mm  diameter
Growth Method:Chemical Vapor Deposition (CVD) Technique 
 Film thickness:   1-10 monolayer  thick
Graphene film is multilayer with thickness varying in the range 1-10 layers;
Graphene layers are aligned relative to each (graphite-like A-B stacking ) other as indicated by the Raman spectrum
The graphene is grown on Ni film by CVD process.
Nickel film is deposited on the substrate covered by thermally grown oxide layer
Thickness of the Ni layer is 400 nm;
The thickness of the silicon oxide layer is 500 nm;
The thickness of the wafer is 500 μm
The crystallographic orientation of silicon is 100;

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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