PAM XIAMEN offers 200mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Below are just some of our recent 200mm silicon wafer sale specials.
8″ silicon wafer
Dia.: 200+/-0.5mm
Type: P
Ori.: <100>
Res.: 1000-3000 ohm.cm
Thk.: 705-745um
V-notch
Surface: Polished/Etched
MFG: MEMC
200mm Silicon from PAM XIAMEN
200mm N/Ph [...]
2019-02-20meta-author
With the development of cloud computing, mobility, Internet of Things, machine learning, etc., the demand for big data storage and computing processing has also increased significantly. More data processing means more energy consumption, leading to the construction of additional data centers and supporting infrastructure. [...]
2022-07-18meta-author
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer:
Description
Growth Method
—
MCZ
Single crystal size
inch
2 – 8
Conductivity Type
—
N
P
Doped elements
—
P/Sb
B
Crystal Orientation
—
<111>
<110>
<100>
<111>
<110>
<100>
Resistivity
Ω.cm
0.0015-100
0.001-100
RRG
%
20
20
Oxygen Concentration
atoms/cm3
1.00E+18
1.00E+18
Carbon Concentration
atoms/cm3
5.00E+16
5.00E+16
Diameter
mm
55-157
55-157
Length
mm
50-500
50-500
Dislocation
EA/cm2
N/A
N/A
Swirl(After Oxidation)
—
N/A
N/A
Remarks:The above parameters can be customized.
FAQ about MCZ Silicon Wafers
Q:This is just a curiosity, but let me ask about the production method of [...]
2019-02-27meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM XIAMEN offers Single crystal LiGaO2.
LiGaO2 (001 ) 10x10x0.35mm, 2sp, with domain
LiGaO2 (001 ) 10x10x0.5mm, 1sp, with domain”
LiGaO2 (001 ) 10x10x0.5mm, 2sp
LiGaO2 (010 ) 10x10x0.5mm, 1sp,with doman
LiGaO2 (010 ) 10x10x0.5mm, 2sp
LiGaO2 (100 ) 10x10x0.5mm, 1sp,
LiGaO2 (100 ) [...]
2019-05-07meta-author
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author