PAM XIAMEN offers 2″ Silicon Oxide Wafer
2″ Silicon Oxide Wafer
Diameter (mm): 50mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < [...]
2020-04-24meta-author
MESFET (Metal-Semiconductor Field Effect Transistor) is a field-effect transistor composed of Schottky barrier gates. SiC microwave MESFET was developed between 1995 and 2002 to replace GaAs microwave field effect transistors (FETs). There are three types of substrate materials used conductive substrate (n+- SiC), high-purity semi insulating substrate [...]
2023-11-24meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
20±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
30
n- Si:P
4.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
9.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
12±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
11±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
36
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
41
n- Si:P
25±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42
n- Si:P
20.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42.5
n- Si:P
17±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
52.5
n- Si:P
12.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
56
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
70
n- Si:P
73±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
72
n- Si:P
12.5±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
73
n- Si:P
84±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
13±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
11±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
12±10%
n/n+
3″Øx375μm
n- Si:As[111]
0.001-0.005
P/E
85
n- [...]
2019-03-08meta-author
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
PAM XIAMEN offers Gallium Phosphate GaP Crystal and Substrate.
Main Parameters
Crystal structure
Cubic
Growth method
crystallization process
Crystal lattice parameters
a=5.642Å
Density
2.16(g/cm3)
Wave band
0.25~22.00um
Index of refraction
1.54427
T
0.9
Nf
0.0127
Surface roughness
<30A
orientation
<111>, <110>, <100>
size
10×10×2.0mm, 20*20*2.0mm, other sizes available upon request
polished
One side or double
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-12meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer
Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm,
Warp<60μm,
One-side-polished, Particles: ≤10@≥0.3μm,
MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched,
Tarnish, orange peel, contamination, haze,
micro scratch, chips, edge chips, crack,
crow feet, pin hole, pits, dent, waviness,
smudge&scar on [...]
2019-09-03meta-author