PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(10-11)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
PAM XIAMEN offers PET film.
PET Film with protective film ,200mm×300mmx Minimum thickness-200um
PET Film with protective film
Size:,200mm×300mm
Minimum thickness: -200um
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-05-14meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
37
p- Si:B
35±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
16.5
n- Si:P
12.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
13±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7±1
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
45
p- Si:B
14.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
7
n- Si:P
12±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
p- Si:B
80.5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.002-0.005
P/E
88
n- Si:P
27±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
105
p- Si:B
0.0035±10%
P/N/N+
4″Øx380μm
n- Si:As[111]
0.002-0.005
P/E
26
n- Si:P
5±10%
P/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10.15
n- Si:P
3.8±0.5
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
6.8±0.8
n- Si:P
0.55±0.15
N/N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
16.5
n- Si:P
35 ±10%
N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
19±1.3
n- Si:P
25±5
N/N/N+
4″Øx508μm
n- Si:As[111]
0.002-0.005
P/E
54.5±3.6
n- Si:P
4.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
20
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
20
n- Si:P
0.09 ±10%
N/N+
4″Øx400μm
n- [...]
2019-03-08meta-author
PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution.
1. Specification of CZT High Resolution Pixel Detector
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
10.0×10.0mm2
Thickness
2.0mm
5.0mm
Pixel size
1.1×1.1mm2
Pixel array
8×8
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
20KeV~700MeV
20KeV~700MeV
Energy resolution(22℃)
<6%@59.5KeV
<4.5%@122KeV
<3%@662KeV
Defective pixel(DP)
10℃~40℃
Storage temperture
20%-80%
Remarks
Customized available
2. Spectrum of [...]
2019-04-24meta-author
Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020
Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]
2012-11-09meta-author
Dummy grade single crystal indium phosphide wafer is available with doping S grown by VGF. The electron concentration of the N-type indium phosphide wafer reaches 1018cm-3, and the indium phosphide resistivity is very low, generally 10-2~10-3Ω·cm. It is mostly used in high-speed optoelectronic devices, such as LD, LED, [...]
2021-08-06meta-author