PAM-1000-01 is a direct current power supply unit in low ripple, low thermal drift and long-term stability. It can supply power to probe in nuclear detection field and others.
Specification
| Input | AC220V/50Hz |
| Output | HV DC 0~500V/0~1000V; LV DC +12V/2W、-12V/1W |
| Alternative current | 2A |
| Ripple voltage | 10ppm (at rated voltage output) |
| The voltage display | Accuracy =±1%, 0~500V/0~1000V output |
| Voltage linear regulation | ±0.001% |
| Working environment | Temperature -20℃ ~ +50℃, Humidity<90% |
| Cooling method | Free cooling |
| Dimension | 265×220×106mm3 |
| Weight | 3kg |
Comparison
| Brands | Imdetek(PAM-1000-1) | other |
| Tested Products | PAM-02A, Num:0005 | PAM-02A, Num:0005 |
| Voltage | ±12V，+HV300V | ±12V，+HV300V |
| System noise(RMS) | 10.1mV | 10.2mV |
| Noise peak | 200mV | 200mV |
| Signal amplitude | 1.36V | 1.36V |
| Resolution | 4.3% | 4.4% |
Features
High stability
Low noise
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.