PAM XIAMEN offers NaCl single crystal substrates.
NaCl single crystal substrates is ideal for growing expitaxial film and studying interface diffusion and defects. The film is easily removed from NaCl substrate by floating it off on water or by dissolving away the underlying substrate. [...]
2019-05-13meta-author
PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
A client of our recently requested a substrate that would help them with their research experiement.
“My experiment is to synthesize the novel magnesium biomaterials on the polyelectrolyte multilayer modified silicon wafer. The wafer would be similar with the [...]
2019-02-26meta-author
MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation [...]
PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω.cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Arsenic
N+
100
57,5 ± 2,5
110 ± 1
0.0 ± 1.0 °
0.0028-0.0035 Ohmcm
150 ± 0.5 mm
440 ± 20 µm
40
5
40
6
SSP
Arsenic
N+
111
57,5 ± 2,5
110 ± 1
4.0 ± 0.5 °
< 0.0035 Ohmcm
150 [...]
2019-02-25meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4″ epi CZ P-type (100)±0.5°
Thickness 525±15μm
Resistivity 0.015±0.005Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-06-28meta-author