PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-03meta-author
Actually, gallium oxide(Ga2O3) is not a new technology. Studies on gallium oxide applications in the field of power semiconductors are carried out by companies and research institutions all the time. And the gallium oxide material is mainly from Japan. With the development of Ga2O3 applications requirements becoming clearer, the performance requirements for high-power devices are getting [...]
2021-04-19meta-author
The SOS technology uses single crystal sapphire or spinel insulator material as the substrate and grows a single crystal silicon film through a high-temperature epitaxy process to fabricate semiconductor integrated circuits. It is a kind of SOI CMOS technology. The silicon on sapphire structure [...]
2019-05-16meta-author
P Type GaN Template
PAM-XIAMEN Offers p type GaN Template
Published on December,27, 2012
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template.
“Now we can offer wide range [...]
2012-12-27meta-author
Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing [...]
2018-11-26meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI Prime
p-type Si:B
[100]
3″
350
P/E/P
0.100-0.200
SEMI Prime
p-type Si:B
[100]
3″
400
P/P
0.015-0.016
SEMI Prime
p-type Si:B
[100]
3″
380
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
0.003-0.004
SEMI Prime
p-type Si:B
[100]
3″
100
P/P
0.0026-0.0030
SEMI Prime
p-type Si:B
[100]
3″
300
P/E
0.002-0.003
SEMI Prime
p-type Si:B
[100]
3″
525
P/E
0.0020-0.0027
SF @ 45°
p-type Si:B
[100]
3″
380
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[911]
3″
380
P/E
5-6
PF <110>
p-type Si:B
[111]
3″
380
P/E
18-21
SEMI Prime
p-type Si:B
[111]
3″
775
P/E
13-14
Prime, NO Flatst
p-type Si:B
[111]
3″
1000
P/E
10-20
Prime, NO Flatst
p-type Si:B
[111-4°]
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111]
3″
2000
P/P
8-9
SEMI Prime, Individual cst
p-type Si:B
[111]
3″
625
P/P
5-8
SEMI Prime
p-type Si:B
[111]
3″
2300
P/P
4-7
SEMI Prime, Individual [...]
2019-03-06meta-author