HPSI SiC Wafer for Graphene Growth
For Graphene Growth, HPSI SiC wafer need corresponding quality to make sure quality.100 mm diameter SiC substrates with the following technical requirements:
- 100% Semi-insulating SiC wafers of 100 mm diameter with minimum crystal defects,MPD<5/cm2
- 100% high-purity on-axis type single-crystal 4H-SiC(0001) with no intentional doping.
- Surface oriented parallel to the (0001) crystal plane to within 0.10 degree.
- SiC(0001) surface is Epi-Ready polished substrate on which graphene can be grown.
- Wafer bow is less than 25 micrometers for each wafer.
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