HPSI SiC Wafer for Graphene Growth
For Graphene Growth, HPSI SiC wafer need corresponding quality to make sure quality.100 mm diameter SiC substrates with the following technical requirements:
1. 100% Semi-insulating SiC wafers of 100 mm diameter with minimum crystal defects,MPD<5/cm2
2. 100% high-purity on-axis type single-crystal 4H-SiC(0001) with no intentional doping.
3. Surface oriented parallel to the (0001) crystal plane to within 0.10 degree.
4. SiC(0001) surface is Epi-Ready polished substrate on which graphene can be grown.
5. Wafer bow is less than 25 micrometers for each wafer.
If you need more details, please see below link: