HPSI SiC Wafer for Graphene Growth

HPSI SiC Wafer for Graphene Growth

For Graphene Growth, HPSI SiC wafer need corresponding quality to make sure quality.100 mm diameter SiC substrates with the following technical requirements:

  1. 100% Semi-insulating SiC wafers of 100 mm diameter with minimum crystal defects,MPD<5/cm2
  2. 100% high-purity on-axis type single-crystal 4H-SiC(0001) with no intentional doping.
  3. Surface oriented parallel to the (0001) crystal plane to within 0.10 degree.
  4. SiC(0001) surface is Epi-Ready polished substrate on which graphene can be grown.
  5. Wafer bow is less than 25 micrometers for each wafer.  
HPSI SiC Wafer for Graphene Growth

HPSI SiC Wafer for Graphene Growth

 

 

 

 

 

 

 

 

 

If you need more details, please see below link:
https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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