PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size:
1. Specifications of SiC Boule Crystal
No.1: 4″ SiC Boule Crystal, Production Grade
Polytype: Production- 4H
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2020-05-19meta-author
PAM XIAMEN offers 3″ Silicon Oxide Wafer
3″ Silicon Oxide Wafer
Diameter (mm): 76mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles [...]
2020-04-24meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-6
N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-author
Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector
Near-infrared reflectance spectra of 5 μm thick low-temperature (LT) GaAs films on GaAs/AlAs Bragg reflectors (BRs) have been studied by model calculations as a function of the linear absorption coefficient of the films αf. [...]
PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):
1. Wafer List:
2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single [...]
2019-03-11meta-author
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
c doped
c [...]
2020-05-26meta-author