From the perspective of the cross-sectional structure of integrated circuits, most integrated circuits are fabricated on the shallow surface layer of the silicon base material. Due to the requirements of the manufacturing process, high requirements are placed on the dimensional accuracy, geometric accuracy, surface [...]
2022-06-13meta-author
PAM XIAMEN offers PECVD Nitride
PECVD nitride is an alternative to LPCVD nitride when lower temperature ranges are required. Micro-mechanicalWidely used in Micro-Electro-Mechanical Systems (MEMS) and semiconductor processing, PECVD nitride is a tensile stress film that can be used as a passivation layer or to [...]
2019-02-12meta-author
PAM XIAMEN offers 1″&1.5″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
25.4
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
Intrinsic
Undoped
FZ
-100
> 20000
275-325
P/E
PRIME
25.4
N
Sb
CZ
-100
.5-40
200-250
P/E
PRIME
25.4
N
Sb
CZ
-100
5-40
225-275
P/E
PRIME
25.4
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
25.4
Shipping Cassette
ePak
Holds25Wafers
Clean Room
38.1
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-02-27meta-author
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]
AlGaN is a direct wide band gap semiconductor material. By changing the composition of AlGaN material, the band gap size can be continuously adjusted from 3.39 eV to 6.1 eV, covering the UV band range from 210 nm to 360 nm, so it is [...]
2022-10-14meta-author
A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
2020-02-18meta-author