PAM XIAMEN supply InAs wafer up to 2″” diameter.

InAs <100> doped

InAs (100), P Type, Zn doped 10×10 x 0.5 mm, one side polished
InAs (100), P Type, Zn doped 5×5 x 0.5 mm, one side polished
InAs (100), S-doped 2″ dia x 0.5 mm, one side polished,cc:(1-2)E18/ cm^3
InAs (100), S-doped 2″ dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3
InAs (100), S-doped 10x10x0.5mm, 1sp
InAs (100), P Type, Zn doped 2″ dia x 0.5 mm, one side polished
InAs, (100), Sn doped, N-type, 10mm x10mm x 0.5mm 1sp

InAs <100> undoped

InAs (100), Undoped 2″ dia x 0.5mm, one side polished
InAs (100), undoped 10x10x0.45mm, 2sp
InAs (100), undoped 10x10x0.5mm, 1sp
InAs (100), undoped 30mm dia wafer 1sp
InAs (100), undoped 5x5x0.45mm, 2sp
InAs (100), undoped 5x5x0.5mm, 1sp
InAs (100), Undoped, 2″ dia x 0.45 mm, two sides polished

InAs <111>

InAs (111)A, P Type, Zn doped 2″ dia x 0.45 mm, one side polished
InAs (111)A, N type, undoped, 2″ in dia x 0.45mm, 1sp
InAs (111)B, N type, undoped, 2″ in dia x 0.45mm, 1sp
InAs (111)A, undoped, N-type, 10mm x10mm x 0.45mm 1sp
InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp

InAs <411>

InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp

InAs <511>

InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.