PAM-XIAMEN provides indium arsenide (InAs) ingot with high quality and competitive price. Indium arsenide is a group III-V compound semiconductor material composed of indium and arsenic. It is a silver-gray solid at room temperature, and the indium arsenide crystal structure is a zinc blende crystal structure with a lattice constant of 0.6058nm, and a density of 5.66g/cm (solid state), 5.90g/cm (liquid at the melting point). The indium arsenide energy band structure is a direct transition, and the band gap width (300K) is 0.45eV. At the melting point of InAs (942 degree), the dissociation pressure of arsenic is only 0.033MPa, and single crystals can be grown from the melt under normal pressure. Indium arsenide ingot has high electron mobility and mobility ratio (μe/μh=70), low magnetoresistance effect and small temperature coefficient of resistance. Thus, indium arsenide boule is an ideal material for manufacturing Hall devices and magnetoresistive devices. Below is the specification listed for your reference.
1. Indium Arsenide Ingot Specification (PAM210618-INAS)
|CC (@77K):||<=3*10^16 cm-3|
|Mobility:||>=18000 in room temperature|
|Ingot length:||>= 50mm|
Besides, indium arsenide polycrystalline ingot boule is available:
InAs Polycrystalline Crystal (PAM170324-INAS)
Undoped, high Purity, >=6N
Thickness: 1mm, 2mm, 4mm, 5mm, 10mm or 20mm
500 grams per boule
2. Indium Arsenide Ingot Electrical Properties
* Basic Parameters
The indium arsenide breakdown field is about 4·104 V cm-1;
Diffusion coefficiet of electrons of indium arsenide is ≤103 cm2s-1;
The indium arsenide crystal hole thermal velocity is 2·105 m s-1.
The indium arsenide band gap changes with the stress, please see the highlight in purple:
From the III-V and II-VI lattice constant comparison table, the indium arsenide lattice constant is highlight in purple circle:
* Indium arsenide mobility and Hall effect
Under different electron concentration, the relationship between electron hall mobility and temperature is show as in the figure:
* Indium arsenide transport properties in high electric fields
The following picture shows the InAs steady-state field dependence:
* Recombination parameters of N type indium arsenide boule crystal
The longest lifetime of holes is τp ~ 3·10-6 s, and the diffusion length Lp is about Lp ~ 10 – 20 µm.
3. Indium Arsenide Application
Indium arsenide single crystal is used to make the infrared detector with a wavelength from 1 µm to 3.8 µm, high speed electronics, support communication and diode lasers. The emission wavelength of indium arsenide is 3.34μm, and lattice-matched In-GaAsSb, InAsPSb and InAsSb multi-epitaxial materials can be grown on the InAs substrate, which can manufacture lasers and detectors for optical fiber communication in the 2～4μm band.