Indium Semiconductor Wafer

Indium Semiconductor Wafer

PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb

InAs wafer Substrate- Indium Arsenide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type  Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InAs
(110)
40.0
500
SSP
N/A
P
(1-9)E17
N/A
N/A
1-100
InAs
(100)
50.8
450
SSP
N/A
P
1E17/cc
N/A
< 20000
1-100
InAs
(100)
50.8
400
SSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(100)
50.8
400
DSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(111)B
50.8
N/A
SSP
N/A
N/S
(1-3)E18
N/A
N/A
1-100
InAs
(100)
50.8
N/A
SSP
N/A
N/Te
1E16/cc
N/A
N/A
1-100
InAs
(100)
50.8
400
DSP
N/A
P
(1-9)E18/cc
N/A
N/A
1-100
InAs
(100)
3x3x5
N/A
N/A
N/A
N/A
3E16/cc
N/A
N/A

As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team

3)2”InAs

Type/Dopant:N Un-doped

Orientation : <111>A ±0.5°

Thickness：500um±25um

epi-ready

Ra<=0.5nm

Carrier Concentration(cm-3):1E16~3E16

Mobility(cm -2 ):>20000

EPD（cm -2 ）:<15000

SSP

5)2”InAs

Type/Dopant:N/P

Orientation ：(100),

Carrier Concentration(cm-3)：(5-10)E17,

Thickness：500 um

SSP

Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

InP Wafer Substrate- Indium Phosphide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type   Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InP
(111)
25.4
300
N/A
N/A
N/A
<3E16
>3500
<3E4
1-100
InP
(100)
50.8
400±10
SSP
NA
N/
(5-50)E15
NA
< 20000
1-100
InP
(111)
50.8
400±10
SSP
NA
P/Zn
~1E19
NA
< 20000
1-100
InP
(100)
50.8
400
SSP
NA
N/
~5E17
NA
NA
1-100
InP
(111)A
50.8
N/A
N/A
N/A
P/Zn
~5E18
NA
NA
1-100
InP
(111)±0.5°
50.8
350
SSP
>1E7
Undoped
(1-10)E7
>2000
<3E4
1-100
InP
(100)/(111)
50.8
350-400
SSP
NA
N
(1-3)E18
NA
NA
1-100
InP
(111)
50.8
500±25
SSP
NA
Undoped
NA
NA
NA
1-100
InP
(111)A
50.8
500
SSP
>1E7
Undoped
N/A
N/A
N/A
1-100
InP
(111)A
50.8
500±25
SSP
NA
Undoped
NA
NA
NA
1-100
InP
(111)B
50.8
500±25
SSP
NA
Undoped
NA
NA
NA
1-100
InP
(110)
50.8
400±25
SSP
N/A
P/Zn  N/S
NA
NA
NA
1-100
InP
(110)
50.8
400±25
DSP
N/A
P/Zn  N/S
NA
NA
NA
1-100
InP
(110)±0.5
50.8
400±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
InP
(100)±0.5
50.8
350±25
SSP
N/A
p/zn
N/A
N/A
N/A
1-100
InP
N/A
50.8
500
N/A
N/A
N/A
N/A
N/A
N/A
1-100
InP
(111)B
50.8
400±25
N/A
>1E4
N/Te
NA
NA
NA
1-100
InP
(211)B
50.8
400±25
N/A
>1E4
N/Te
NA
NA
NA
1-100
InP
(311)B
50.8
400±25
N/A
>1E4
N/Te
NA
NA
NA
1-100
InP
(111)
50.8
N/A
SSP
N/A
N
(1-9)E18
NA
NA
1-100
InP
N/A
50.8
4000±300
N/A
N/A
N/A
undoped
N/A
N/A
1-100
InP
(100)
50.8
500±25
SSP
N/A
N/s
(1-9)E18
N/A
N/A
1-100
InP
(100)
50.8
500±25
SSP
N/A
N/s
~3E17
N/A
N/A
1-100
InP
(100)/(111)
76.2
600
SSP
NA
N
(1-3)E18
NA
NA
1-100
InP
(100)±0.5
76.2
600±25
SSP
NA
Undoped
<3E16
>3500
<3E4
1-100
InP
(100)
76.2
400-600
DSP
NA
Undoped/Fe
NA
NA
NA
1-100
InP
(100)
76.2
600±25
SSP
NA
N/A
N/S
N/A
N/A
1-100
InP
(100)
76.2
600±25
SSP
NA
N/A
N/A
N/A
N/A
1-100
InP
(100)
76.2
675±25
DSP
NA
N/A
(3-6)E18
N/A
N/A
1-100
InP
(100)
76.2
600±25
DSP
NA
N/A
2.00E+18
e
N/A
1-100
InP
(100)
76.2
600±25
DSP
NA
N/A
N/A
N/A
N/A
1-100
InP
(111)
10×10
500±25
SSP
NA
Undoped
N/A
N/A
N/A
1-100
InP
N/A
30-40
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1-100
InP
(100)2°off+/-0.1 degree t.n. (110)
50±0.2
500±20
SSP
≥1E7
SI/Fe
N/A
≥2000
≤5000

As a InP wafer supplier,we offer InP wafer list for your reference, if you need price detail, please contact our sales team

1)2″InP wafer
Orientation:<100>±0.5°
Type/Dopant:N/S;N/Un-doped
Thickness:350±25mm
Mobility:>1700
Carrier Concentration:(2~10)E17
EPD:<50000cm^-2
Polished:SSP

2)1″,2″InP wafer
Orientation:<100>±0.5°
Type/Dopant:N/Un-doped
Thickness:350±25mm
Mobility:>1700
Carrier Concentration:(2~10)E17
EPD:<50000cm^-2
Polished:SSP

8)2″ size InGaAs/InP epitaxial wafer,and we accept custom specs.
Substrate: (100) InP substrate
Epi Layer 1: In0.53Ga0.47As layer , undoped , thickness 200 nm
Epi Layer 2: In0.52Al0.48As layer , undoped , thickness 500 nm
Epi Layer 3:In0.53Ga0.47As layer , undoped , thickness 1000 nm
Top Layer :In0.52Al0.48As layer , undoped , thickness 50 nm

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

InSb Wafer Substrate- Indium Antimonide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type   Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InSb
(100)
50.8
500
SSP
N/A
N/undoped
<2E14
N/A
N/A
1-100
InSb
(100)
50.8
500
N/A
N/A
N/A
N/A
N/A
N/A

As a InSb wafer supplier,we offer InSb wafer list for your reference, if you need price detail, please contact our sales team

3)2″InSb
Orientation：(111) + 0.5°
Thickness:450+/- 50 um
Type/Dopant:N/undoped
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP

5)2″InSb
Thickness:525±25µm,
Orientation：[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=（4-8）E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry

The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism was analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that amorphous In2O3 and As2O3 phases are formed at InAs surface during annealing and, meanwhile, a thin crystalline As layer at the interface between the oxidized layer and the wafer is also generated which leads to a decrease in thickness of the surface electron accumulation layer since As adatoms introduce acceptor type surface states

2018-05-23

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Silicon Wafer Si wafer Substrate -Silicon Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 Si N/A 25.4 280 SSP 1-100 P/b N/A N/A N/A 1-100 Si N/A 25.4 280 SSP 1-100 P/b (1-200)E16 N/A N/A 1-100 Si (100) 25.4 525 N/A <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si with Oxide layer (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 350-500 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 25.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 Si (100) 50.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 n-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 Si with electrodes (100) 50.8 400 N/A <0.05 N/p 1E14-1E15 N/A N/A 1-100 Si (100) 50.8 275 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 50.8 275±25 SSP 1~10 N/p N/A N/A N/A 1-100 Si (111) 50.8 350±15 SSP >10000 N/A N/A N/A N/A 1-100 Si (100) 50.8 430±15 SSP 5000-8000 N/A N/A N/A N/A 1-100 Si (111) 50.8 410±15 SSP 1~20 N/A N/A N/A N/A 1-100 Si (111) 50.8 400-500 SSP >5000 N/A N/A N/A N/A 1-100 Si (100) 50.8 525±25 SSP 1~50 N/A N/A N/A N/A 1-100 Si (100) 50.8 500±25 SSP 1~10 N  P N/A N/A N/A 1-100 Si (100) 50.8 500±25 P/P >700 P/ N/A N/A N/A 1-100 Si (100) 76.2 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 n-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 Si (100) 100 625 SSP >10000 N/A N/A N/A N/A 1-100 Si (100) 100 525 SSP N/A N/P N/A N/A N/A 1-100 Si (100) 100 320 SSP >2500ohm·cm P/b N/A N/A N/A 1-100 Si (100) 100 N/A SSP 10~30 N/p N/A N/A N/A 1-100 Si (100) 100 505±25 SSP 0.005-0.20 N/P-doped N/A N/A N/A 1-100 Si (100) 100 381 SSP 0.005-0.20 N/P-doped N/A N/A N/A 1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A 1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A 1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A 1-100 Si [...]

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Superconductor Substrates Crystal Structure M.P. Density Thermal Expansion Dielectric constant Growth Tech. & max. size standard 1or 2 sides epi polished wafer oC g/ cm3 LSAT Cubic 1840 6.74 10 22 CZ 20x20x0.5mm (LaAlO3)0.3 -(Sr2AlTaO8)0.7 a=3.868 Å Ø35mm 10x10x0.5mm LaAlO3 Rhombo. 2100 6.51 9.2 24.5 CZ Ø3″x0.5mm a=3.790 Å Ø3″ Ø2″x0.5mm c=13.11 Å   Ø1″x0.5mm     10x10x0.5mm MgO Cubic 2852 3.58 12.8 9.8 Flux Ø2″x0.5mm a=4.21 Å Ø2″ 10x10x0.5mm NdGaO3 Orthor. 1600 7.57 7.8 25 CZ Ø2″x0.5mm a=5.43 Å Ø2″ 10x10x0.5mm b=5.50 Å     c=7.71 Å     SrTiO3 Cubic 2080 5.12 10.4 300 vernuil 10x10x0.5mm a=3.90 Å Ø30mm SrLaAlO4 Tetrag. 1650 16.8 CZ 10x10x0.5mm a=3.756 Å Ø20mm c=12.63 Å   YAlO3 Orthor. 1870 4.88 2 ~ 10 16`20 CZ 10x10x0.5mm a=5.176 Å b=5.307 Å Ø30mm c=7.355 Å   YSZ Cubic ~2500 5.8 10.3 27 Flux Ø2″x0.5mm a=5.125 Å Ø2″ 10x10x0.5m

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