InGaAs EPI on InP( Semi-insulating)

InGaAs EPI on InP( Semi-insulating)

PAM XIAMEN offers indium gallium arsenide (InGaAs) epi layer on semi-insulating InP substrate by MOCVD deposition. InGaAs is a light-sensitive material, and its response band can be adjusted by adjusting the value of In component x to obtain a response of 0.87~3.5um. The working band of indium gallium arsenide detector covers visible light and night light energy. More details of the epitaxial wafer with InGaAs/InP quantum well, please see the following specifications.

Indium Gallium Arsenide Epi on InP Substrate

1. Indium Gallium Arsenide Epitaxial Film on InP Specifications

No 1: InGaAs EPI on semi-insulating InP substrate:

-2″ dia. InGaAs Film on InP (SI) (100) Depositied by MOCVD, 2″ dia x 0.35mm,2sp,Film:500 nm
-2″ dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2″ dia x 0.35mm,2sp,Film:750 nm

No.2: InGaAs/InP structures (epi InP wafer with InGaAs sand-witched) PAM190430-INGAAS

Layer Material Doping(cm-3) Thickness(nm)
p-Contact p++  InP ??? (Zn)
p+ InP About 2  x 1018 (Zn)
i-layer/Absorber i- InGaAs n.i.d.
n-Contact n+ InP 1.0 x 1019 (Si)
Etch-Stop i- InGaAs n.i.d.
Buffer i- InP n.i.d.
Substrate S.I. InP Fe



# The p-doping concentration of top layer max. 2E18;
# When delivery, we can offer X-ray diffractometry and carrier concentration distribution profile data;
# Indium gallium arsenide and indium phosphide epitaxial structures on InP semi-insulating substrate with heavily Zn doped p+ – InP layers (see Figure).

No. 3: InGaAs Epitaxial Film Growth on InP Substrate, 2inch


Layer No. Material Thickness(Å) Dopant Level(/cm3)
6 n-InP 8000 >1.5E18
5 i-InGaAs
4 p-InGaAs
3 p-InP
2 p-InGaAs Zn
1 p-InP buffer
  SI InP Sub      

2. Grow InGaAs Material on InP Substrate

The important application of InxGa1-xAs materials in the field of photocathodes is the preparation of transfer electron (TE) photocathodes. TE photocathodes are field-assisted photocathodes. With the help of the Gunn effect, the electrons on the energy valley of the conduction band’s main minimum T can be scattered to the higher satellite valleys, resulting in the emission condition of negative electron affinity. The indium gallium arsenide layer is grown on (100) orientation or (111) B orientation, Cr-doped semi-insulating InP substrate. The epitaxial layer is doped with P-type impurity Zn or Cr. The reported InGaAs photocathode image intensifier has a radiation sensitivity of 2mA/W at 1.06um, which is equivalent to a quantum efficiency of about 0.23%, with an In content of 15%. When the In content value x=0.53, InGaAs and InP material lattice match, the response wavelength of the indium gallium arsenide device is 1.7um at this time. Therefore using InP material as the substrate material, large area In0.53Ga0.47As with good crystal quality can be grown. In0.53Ga0.47As materials are the standard InGaAs materials.


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