InGaAs EPI on InP( Semi-insulating)
PAM XIAMEN offers InGaAs EPI on InP( Semi-insulating).
No1: InGaAs EPI on semi-insulating InP substrate:
-2″ dia. InGaAs Film on InP (SI) (100) Depositied by MOCVD, 2″ dia x0.35mm,2sp,Film:500 nm
-2″ dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2″ dia x0.35mm,2sp,Film:750 nm
No.2:InGaAs/InP structures PAM190430-INGAAS
| Layer | Material | Doping(cm-3) | Thickness(nm) |
| p-Contact | p++ InP | ??? (Zn) | – |
| – | – | – | |
| p+ InP | About 2 x 1018 (Zn) | – | |
| i-layer/Absorber | i- InGaAs | n.i.d. | – |
| n-Contact | n+ InP | 1.0 x 1019 (Si) | – |
| Etch-Stop | i- InGaAs | n.i.d. | – |
| Buffer | i- InP | n.i.d. | – |
| Substrate | S.I. InP | Fe | – |
Note：
1.The p-doping concentration of top layer max. 2E18.
2.When delivery, we can offer X-ray diffractometry and carrier concentration distribution profile data
3.InGaAs/InP structures epitaxial structures on InP semi-insulating substrate with heavily Zn doped p+ – InP layers (see Figure).
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com