InGaAs EPI on InP( Semi-insulating)

InGaAs EPI on InP( Semi-insulating)

PAM XIAMEN offers InGaAs EPI on InP( Semi-insulating) by MOCVD deposition.

No1: InGaAs EPI on semi-insulating InP substrate:

-2″ dia. InGaAs Film on InP (SI) (100) Depositied by MOCVD, 2″ dia x0.35mm,2sp,Film:500 nm
-2″ dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD ( InP:Fe) 2″ dia x0.35mm,2sp,Film:750 nm

No.2:InGaAs/InP structures PAM190430-INGAAS

Layer	Material	Doping(cm-3)	Thickness(nm)
p-Contact	p++ InP	??? (Zn)	–
	–	–	–
	p+ InP	About 2 x 1018 (Zn)	–
i-layer/Absorber	i- InGaAs	n.i.d.	–
n-Contact	n+ InP	1.0 x 1019 (Si)	–
Etch-Stop	i- InGaAs	n.i.d.	–
Buffer	i- InP	n.i.d.	–
Substrate	S.I. InP	Fe	–

Note：

1.The p-doping concentration of top layer max. 2E18.
2.When delivery, we can offer X-ray diffractometry and carrier concentration distribution profile data
3.InGaAs/InP structures epitaxial structures on InP semi-insulating substrate with heavily Zn doped p+ – InP layers (see Figure).

For more information, please contact us email at [email protected] and [email protected]

2019-04-28

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