Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAs wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to offer InGaAs wafer to our customers including many who are developing better and more reliable for infrared detector and HEMT devices using InGaAs channels. Our InGaAs wafer has excellent properties,single crystal epitaxial films of InGaAs can be deposited on a single crystal substrate of III-V semiconductor having a lattice parameter close to that of the specific gallium indium arsenide alloy to be synthesized. Three substrates can be used: GaAs, InAs and InP. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InGaAs wafer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.”
PAM-XIAMEN’s improved InGaAs product line has benefited from strong technology, which is supported from Native University and Laboratory Center.
Now it shows an example as follows:
PAM200624-INGAAS LAYER ON INP
InGaAs Photodetector Wafer on InP Substrate
|Material||Doping (cm-3)||Thickness (nm)|
|P++ InGaAs||1.4*1019 (C)||–|
|Semi Insulator InP||Fe||Substrate|
Note: In the structure, InGaAs is generally doped with Zn. If C is doped, the concentration may be lower, and the quality of materials with high concentration of C will be worse. So Zn doped is suggested.
About Xiamen Powerway Advanced Material Co., Ltd
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
About InGaAs Wafer
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide) is a ternary alloy (chemical compound) of indium, gallium and arsenic. Indium and gallium are both from boron group (group III) of elements while arsenic is a pnictogen (group V) element. Thus alloys made of these chemical groups are referred to as “III-V” compounds. Because they are from the same group, indium and gallium have similar roles in chemical bonding. InGaAs is regarded as an alloy of gallium arsenide and indium arsenide with properties intermediate between the two depending on the proportion of gallium to indium. InGaAs is a semiconductor with applications in electronics and optoelectronics.
About Q& A
Q: Graded InAsP buffer layer (typ. 1-5um), n+ doped, what is the doping concentration.: 0.1-1.0e18
A: no problem
Q: InGaAs layer, 2-3um – 1.9um cutoff what is the exact thickness? 3.0um
A: no problem
Q: InAsP layer, 0.5-1um – lattice matched to the InGaAs layer below, see my last email,
InAsP buffer layer has as main function to reduce the dislocation density in the material,
thickness should follow from your internal work
A: no problem
Q: What is the roughness of surface required?
A: We never characterized this material towards roughness since it has cross-hatch; electrical
characteristics of the processed material towards PIN diodes (dark current) is much more
important. our roughness should be on about Ra=10nm
Q: What is the EPD? EPD <=500/cm2
A: the substrate EPD should be <=500/cm2, EPD of total wafer <=10^6/cm2
Q: What is the quantity?
A: for evaluation: 2 or 3, after qualification: 5-10, no problem
Q: Substrate orientation: to your best knowledge, similar remark as for the InAsP buffer layer
and roughness; another supplier was using (100)2deg off <110>+/-0.1
A: our substrate orientation should be (100)+/-0.5deg