Why do We Need High Purity Semi-insulating SiC Wafer?
When SiC wafer is used as the substrate of RF devices, it is required that SiC should be semi insulating and its resistivity should be greater than 10 ^ 6 Ω· cm. In fact, the resistivity [...]
2020-08-25meta-author
PAM XIAMEN offers 5″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
5″
635 ±15
E/E
FZ >5,000
p-type Si:B
[100]
5″
889 ±13
P/E
FZ >1,000
Prime
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
p-type Si:B
[100]
5″
920 ±10
E/E
FZ >1,000
Warp measured <8μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
400
P/E
FZ 7,000-14,300
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm
n-type Si:P
[100]
5″
350
P/E
FZ 5,000-10,000
SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers
n-type Si:P
[111] ±0.1°
5″
200 ±15
BROKEN
FZ >3,000
Broken L/L wafers, in 2 pieces
n-type Si:P
[111]
5″
300 ±15
P/E
FZ 1,000-3,000
SEMI Prime, in [...]
2019-03-05meta-author
Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy
Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the [...]
SiC Ingots
PAM-XIAMEN offers n type SiC ingots with 4H or 6H polytype in on axis or 4deg.off axis in different quality grades for researcher and industry manufacturers, size from 2” to 4”, thickness from5-10mm to >15mm.
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ [...]
2018-08-07meta-author
Banknotes, documents, branded products, and sensitive goods like pharmaceuticals or technical components are often marked to distinguish them from imitations. However, some counterfeiters have learned to copy conventional fluorescent tags. In the journal Angewandte Chemie, Chinese scientists have now introduced a new, exceptional anti-counterfeit ink [...]
2017-10-30meta-author
Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward [...]
2019-10-30meta-author
