PAM-XIAMEN can offer 2” InGaAs/InP epi wafer for PIN as follows. InGaAs is the compound of InAs and GaAs. In the periodic table of chemical elements, In and Ga are elements of the third group, and As is the fifth group element. The properties of InGaAs are between the properties of GaAs and inAs. As a room temperature semiconductor, InGaAs is widely used in electronics and photonics nowadays.
1. Specifications of InGaAs/InP Epi Wafer for PIN
1.1 InGaAs Epi Wafer on InP Substrate
InP Substrate:
InP Orientation: (100)
Doped with Fe, Semi-Insulating
wafer Size: 2″ diameter
Resistivity:>1×10^7)ohm.cm
EPD:<1×10^4 /cm^2
Single side polished.
EPI layer :
InxGa1-xAs
Nc>2×10^18 /cc (using Si as dopant),
Thickness :0.5 um (+/- 20%)
Roughness of epi-layer, Ra<0.5nm
1.2 InP-based InGaAs Epi Wafer for PIN
(PAM-190320-InGaAs PIN）
InGaAs PIN epi wafer with a structure consisting of P+ InP layer / InGaAs Intrinsic layer / N+ InP layer grown on a InP 2” (or larger) wafer, more details as below:
| Layer NO. | Composition | Thickness | Epi layer |
| Layer #4 | Contact layer | 0,15mm | InGaAs cap layer, top contact |
| Layer #3 | P-region | 1mm | InP layer |
| Layer #2 | I-region | 3mm | InGaAs absorption layer |
| Layer #1 | N-region | 0,5mm | InP layer |
| Substrate | n-InP(n-doped, n~1-10×1018cm−3) | ||
| Substrate specifications: | |||
| Crystal orientation | 100 | ||
| Diameter | 2” | ||
| Thickness | 350mm | ||
| Termination | Single Side Polished, backside etched; epiready | ||
1.3 InGaAs/InP (PIN) Epitaxy on 3″ InP Substrate
(PAM160906-INGAAS)
| Back Side Illuminated Structure 1 | |||
| Layer No. | Material | Thickness | Carrier Concentration |
| 5 | P+ InP | 200A | – |
| 4 | P++ InGaAs | – | – |
| 3 | InGaAs | – | – |
| 2 | n+ InP | – | – |
| 1 | InP Buffer layer | – | Un-doped |
| 0 | 3″ Semi-Insulating InP | 300~600um | |
1.4 InGaAs EPI Wafer with PIN Structure
PAM200814-INGAAS PIN
| No. | item | thickness | type | dopant | doping concentration |
| 1 | InP substrate | 350um,2 inch | Semi-insulating | ||
| 2 | InP buffer layer | – | n type | S | – |
| 3 | InGaAs | – | Intrinsic | ||
| 4 | InP cap layer | 0.5um | n type | Si | – |
2. InGaAs Epi Wafer for PIN
Ordinary diodes are composed of PN junctions. A thin, low-doped Intrinsic semiconductor layer is added between the P and N semiconductor materials to form a diode with a P-I-N structure, which is a PIN. Because the carrier concentration and electron mobility of the InGaAs epitaxial layer matched with the InP lattice are very high, which exceed that of the AlGaAs matched with the GaAs lattice, the InGaAs/InP epi wafer has a large application prospects in the frequency range of more than ten hertz. Therefore, the InGaAs epi wafer on InP substrate from PAM-XIAMEN makes the PIN device a fast data transmission rate, low dark current, high response and high reliability.
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