PAM XIAMEN offers 125mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
125
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
125
N
Phos
CZ
-100
1-20
550-600
P/E/OX
PRIME
125
N
Phos
CZ
-100
1-20
575-625
P/E/WTOx
125
N
Phos
CZ
-100
1-50
575-625
P/E/DTOx
PRIME
125
N
Phos
CZ
-100
1-50
575-625
P/E/Ni
PRIME
125
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
125
P
Boron
CZ
-100
1-50
550-650
P/E
PRIME
125
P
Boron
CZ
-100
1-20
575-625
P/E/WTOx
125
P
Boron
CZ
-100
1-50
575-625
P/E/DTOx
PRIME
125
P
Boron
CZ
-100
1-50
575-625
P/E/Ni
PRIME
125
P
Boron
FZ
-100
1000-5000
875-925
P/E
PRIME
125
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
125
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal [...]
2019-03-04meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -2
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-11meta-author
Osram Laboratory Reports 142 lm/W Efficiency Record for Warm White LED Light Source
March 15, 2011…Osram Opto Semiconductors reports that it has set a new laboratory record of 142 lm/W for the efficiency of a warm white LED light source. The LED with a correlated [...]
2012-03-06meta-author
A Plane U-GaN Freestanding GaN Substrate
PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-U
Dimension
5 x 10 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
4″
500
P/E
FZ >10,000
Prime, TTV<5μm
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime, Extra 8 scratched wafers in cassette free of charge
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ >2,000
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
450
P/P
FZ 1,000-2,000
SEMI Prime
p-type Si:B
[100]
4″
420
C/C
FZ 850-900
SEMI Prime
p-type Si:B
[100]
4″
200 ±10
P/P
FZ 100-120
SEMI Prime
p-type Si:B
[100]
4″
250
P/P
FZ 1-3 {0.97-1.01}
SEMI [...]
2019-03-05meta-author
Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer
Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had [...]
