InGaAs is the compound of InAs and GaAs. In the periodic table of chemical elements, In and Ga are elements of the third group, and As is the fifth group element. The properties of InGaAs are between the properties of GaAs and inAs. As a room temperature semiconductor, InGaAs is widely used in electronics and photonics nowadays.
We can offer 2″ InGaAs/InP epi wafer for PIN as follows:
Item 1:
InP Substrate:
InP Orientation: (100)
Doped with Fe, Semi-Insulating
wafer Size: 2″ diameter
Resistivity:>1×10^7)ohm.cm
EPD:<1×10^4 /cm^2
Single side polished.
EPI layer :
InxGa1-xAs
Nc>2×10^18 /cc (using Si as dopant),
Thickness :0.5 um (+/- 20%)
Roughness of epi-layer, Ra<0.5nm
Item 2（PAM-190320-InGaAs PIN）:
InGaAs PIN epi wafer with a structure consisting of P+ InP layer / InGaAs Intrinsic layer / N+ InP layer grown on a InP 2” (or larger) wafer, more details as below:
| Layer NO. | Composition | Thickness | Epi layer |
| Layer #4 | Contact layer | 0,15mm | InGaAs cap layer, top contact |
| Layer #3 | P-region | 1mm | InP layer |
| Layer #2 | I-region | 3mm | nGaAs absorption layer |
| Layer #1 | N-region | 0,5mm | InP layer |
| Substrate | n-InP(n-doped, n~1-10×1018cm−3) | ||
| Substrate specifications: | |||
| Crystal orientation | 100 | ||
| Diameter | 2” | ||
| Thickness | 350mm | ||
| Termination | Single Side Polished, backside etched; epiready | ||
Source: PAM-XIAMEN
For more information, please contact us email at [email protected] and [email protected].