PAM-XIAMEN Offers 2” InGaAsN layer on GaAs substrate

PAM-XIAMEN Offers 2” InGaAsN layer on GaAs substrate

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAsN wafer and other related products and services announced the new availability of size 2″  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.


Dr. Shaka, said, “We are pleased to offer InGaAsN wafer to our customers including many who are developing better and more reliable for laser diode. The photoluminescence properties of InGaAsN quantum wells were examined as a method of improving the performance of GaAs-based 1300 nm lasers. Among the parameters that significantly affect the quality of this material, growth temperature and In/N ratio of the alloy have particularly profound effects. Substantially lower growth temperatures than normally used for GaAs or InGaAs materials appear to enhance the quality of this alloy, while In fractions of 0.3-0.35 result in an acceptable compromise between quantum well strain and optical quality. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InGaAsN wafer are natural by products of our ongoing efforts,  currently we are devoted to continuously develop more reliable products.”


PAM-XIAMEN’s improved InGaAsN product line has benefited from strong technology, which is supported from Native University and Laboratory Center.

Now it shows an example as follows:


layer                         doping            thickness (um)     other
GaAs                        undoped          ~350                   <001> wafer substrate
InGaAsN*                 undoped           0.150                  band gap <1 eV
Al(0.3)Ga(0.7)As      undoped           0.50
GaAs                        undoped           2.
Al(0.3)Ga(0.7)As      undoped           0.50


About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications. Please contact us for more product information or discuss a specific epi layer structure.


About InGaAsN Wafer

Indium gallium arsenide nitride, a novel semiconductors. Single layers and multiple quantum wells made of InGaAsN were investigated. It was found that some nitrogen can be incorporated in InGaAs, but the nitrogen incorporation is apparently limited to very low nitrogen concentrations (^0.2%). This concentration is not enough to reach a emission wavelength of 1.3 /zm.


For more information, please visit our website:,send us email at or

Share this post