InGaAsP/InGaAs on InP substrates

InGaAsP/InGaAs on InP substrates

InGaAsP/InGaAs on InP substrates

 

 

We provide InGaAsP/InGaAs epi on InP substrates as follows:

 

Structure1: 1.55um InGaAsP QW laser

 

No. Layer Doping
0 InP Substrate S-doped, 2E18/cm-3
1 n-InP buffer 1.0um, 2E18/cm-3
2 1.15Q-InGaAsP waveguide 80nm,undoped
3 1.24Q-InGaAsP waveguide 70nm,undoped
4 4×InGaAsP QW+1%
5×InGaAsP Barrier
5nm
10nm
PL:1550nm
5 1.24Q-InGaAsP waveguide 70nm,undoped
6 1.15Q-InGaAsP waveguide 80nm,undoped
7 InP space layer 20nm,undoped
8 InP 100nm,5E17
9 InP 1200 nm, 1.5E18
10 InGaAs 100 nm, 2E19

 

Specification of Structure1:

1)   Method: MOCVD

2)   Size of wafer: 2”

3)   InGaAsP/InGaAs  growth on InP substrates

4)   3-5 types of InGaAsP composition

5)   PL tolerance of +/- 5nm, PL std. dev. <3nm across the wafer (with an exclusion zone of 5mm from the wafer circumference)

6)   PL target range 1500nm.

7)   Strain target -1.0% +/- 0.1% (compressive strain)

8)    No. of layers: 8-20

9)   Total growth thickness: 1.0~3.0um

10)   Parameters to be measured: X-Ray Diffraction Measurement (thickness, strain), Photoluminescence Spectrum (PL, PL uniformity), Carrier Concentration Profiling

 

Structure 2:InP-based Wafers for Fabricating Photodiodes

PAM-201113-INP-BASED

Specification for MUTC-PD Layer Structure

No. Material Doping concentration

(cm-3)

Thickness

(um)

15 p+-InGaAs:Zn 0.05
14 p+-InP:Zn
13 p+-InGaAsP:Zn(Q1.10 um) 0.01
12 p+-InGaAsP:Zn(Q1.40 um) 2×1018
11 p+-InGaAs:Zn 0.05
10 p-InGaAs:Zn
9 p+-InGaAs:Zn
8 n-InGaAs:Si
7 n-InGaAsP:Si(Q1.50 um) 1×1016
6 n-InGaAsP:Si(Q1.15 um) 0.01
5 n+-InP:Si
4 n-InP:Si 5×1016
3 n-InP:Si 0.10
2 n+-InGaAsP.Si(Q1.25 um)
1 n+-InP:Si
0 S.I. InP-substrate (2″ wafer) Fe-Doped

 

Structure 3:
PAM-190925-INGAASP
Substrate: 3″, InP:S[100], Nc = (3-8)E18/cc, EPD < 5000/cm2
Epi-layer 1: 300nm InP, undoped
Epi-layer 2: 200nm, InGaAsP, undoped, lattice matched, emitting at 1275 nm
Epi-layer 3: 100nm, InP, undoped

Structure 4:
Substrate: 3″, InP:S[100], Nc = (3-8)E18/cc, EPD < 5000/cm2
Epi-layer 1: 300nm InP, undoped
Epi-layer 2: 75nm, InGaAsP, undoped, lattice matched, emitting at 1000 nm
Epi-layer 3: 50nm, InGaAsP, undoped, lattice matched, emitting at 1275 nm
Epi-layer 4: 75nm, InGaAsP, undoped, lattice matched, emitting at 1000 nm
Epi-layer 5: 100nm, InP, undoped

 

We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured

with a fiber-based 1550 nm time-resolved differential transmission (∆T) set-up. The InGaAs-based materials show a positive ∆T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ∆T consistent with a two-photon absorption process.

 

Source: PAM-XIAMEN, American Chemical Society

 

For more information, please contact us email at [email protected] and [email protected].

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