InGaN epi-wafers

InGaN epi-wafers 

PAM-XIAMEN offers InGaN epi-wafers  with MQWs as follows:

2-inch GaN epi-wafers – PAM190611-LED

Orientation C(0001) 0.2±0.1 grad. to m-axis (right relative to the OF);
0±0.25 grad. to a-axis (drawing)
Diameter 50.8±0.15 mm
Thickness 430±10 um
Substrate profile:
Shape Cone
Width 2.7 um
Height 1.7 um
Step 0.3 um
Front side Polished, epi-ready (Ra<0.3 nm)
Back side polished 1.0um
Grade optical
OF length 16±1 mm
OF orientation a-axis ±0,25 grad
Bow < 10 um
TTV < 5 um
Warp < 10 um
Chamfer sharp edges are blunted
Laser marking On back side

 

InGaN epi-wafers

InGaN epi-wafers

 

 

 

 

 

 

Parameter Characteristics
Min. Typ. Max.
Thickness р-GaN, um
CC  р-GaN, cm-3
Mobility p-GaN, cm2/ V·s 30
Thickness n-GaN layer, um
CC n-GaN, cm-3
Mobility n-GaN, cm2/ V*s 300
Total thickness GaN, um 5 7
PLFWHM, nm 22
WLD, nm 455 460
Dispersion of  WLD, nm 5
Forward voltage (@ 350 mA), V 2.8 3.4
Reverse voltage (@ 10 uA), V 13 17
Total emitting power (@ 350 mA), mW 400 600

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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