Inserting a low temperature n GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

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Inserting a low temperature n GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs
We have investigated the effects of nonradiative recombination centers (NRCs) on the device performance of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) inserting low-temperature n-GaN (LT-GaN) underlying layers. Inserting an LT-GaN underlying layer prior to growing the MQWs is a successful means of separating the induced nonradiative recombination centers because a growth interrupt interface exists between the n-GaN template and the InGaN QW. We found that by introducing this technique would improve the external quantum efficiency of the as-grown conventional LEDs. The electroluminescence relative intensity of a blue LED incorporating a 70-nm-thick LT-GaN was 20.6% higher (at 20 mA current injection) than that of the corresponding as-grown blue LED in the best case.
Source:Microelectronics Reliability
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2014-01-16

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