

PAM XIAMEN offers 4″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[111]±0.5°, Ro > 10,000 Ohmcm, TTV<5μm, Bow<20μm, Warp<30μm, One-side-Epi-Ready-polished, back-side etched, SEMI Flats, Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, please visit our [...]
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
PAM XIAMEN offers 6″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 6″ 675 P/E 1-100 SEMI Prime, 1Flat (57.5mm) p-type Si:B [100] 6″ 800 E/E 1-50 SEMI, 1Flat (57.5mm), TTV<5μm p-type Si:B [100] 6″ 320 P/E 0.001-0.030 JEIDA Prime p-type Si:B [100] 6″ 675 P/P 0.001-0.005 SEMI Prime, 1Flat (57.5mm) p-type Si:B [100] 6″ 675 P/E 0.001-0.005 SEMI Prime, 1Flat (57.5mm) p-type Si:B [111-4.0°] ±0.5° 6″ 625 P/E 4-15 {7.1-8.8} SEMI Prime, 1 JEIDA Flat(47.5mm) p-type Si:B [111] ±0.5° 6″ 675 E/E 0.010-0.025 SEMI, 1Flat (57.5mm) n-type Si:P [100] 6″ 925 ±15 E/E 5-35 {12.5-29.7} JEIDA Prime, TTV<5μm n-type Si:P [100] 6″ 675 P/E 2.7-4.0 SEMI Prime n-type Si:P [100] 6″ 250 ±5 P/P 1-3 SEMI [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 40mm 250 P/E 1-100 SEMI Prime, Soft cst p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 525 P/P 1-30 SEMI, p-type Si:B [100] 2″ 1000 P/P 1-10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 1-10 SEMI Prime p-type Si:B [100] 2″ 275 P/E 0.5-1.0 SEMI p-type Si:B [100] 2″ 3150 C/C >0.5 1Flat p-type Si:B [100] 2″ 280 P/P 0.4-0.6 SEMI Prime, p-type Si:B [100] 2″ 275 P/E 0.2-0.4 SEMI Prime, p-type Si:B [100] 2″ 279 P/P 0.08-0.12 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 0.015-0.020 Groups of [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6 GE03. NOTE: Wafers must be free of striation marks Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm, p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, TTV<5µm, Bow<30µm, Warp<30µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
– How to Improve the Reliability of Silicon Carbide Materials? The silicon carbide industry chain includes silicon carbide powder, silicon carbide ingots, silicon carbide substrates, silicon carbide epitaxy, silicon carbide wafers, silicon carbide chips and silicon carbide device packaging. Among them, substrate, epitaxial wafer, wafer, [...]