InGaSb Film on GaAs Substrate

PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range

It can be grown on GaAs substrate, GaSb (111)A substrate and GaSb(111)B substrate by MBE, and now please see below spec:

2”, 1um,InGaSb epi layer on GaAs substrate.
Diameter – 50.8±0.5 mm;
Orientation – (100)±0.5°
Substrate thickness – 350±25 µm;
Epi layer:1um
Flat– SEMI-E/J;
Front side- polished, epi-ready;
Back side – etched
Package – each are packed in single wafer container, in the package of aluminium foil bag filled with an inert gas.

For more information, please contact us email at [email protected] and [email protected]

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[email protected] [email protected]

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InGaSb Film on GaAs Substrate

InGaSb Film on GaAs Substrate