InGaSb Film on GaAs Substrate

PAM-XIAMEN can offer InGaSb material substrate, which can be used for InGaSb photodetectors, InGaSb/GaAs quantum dots (QDs), InGaSb-on-insulator for p-MOSFET, and InGaSb/InAs superlattice materials for infrared photodiodes in the very long-wavelength infrared (VLWIR) range

It can be grown on GaAs substrate, GaSb (111)A substrate and GaSb(111)B substrate by MBE, and now please see below spec:

2”, 1um,InGaSb epi layer on GaAs substrate.
Diameter – 50.8±0.5 mm;
Orientation – (100)±0.5°
Substrate thickness – 350±25 µm;
Epi layer:1um
Flat– SEMI-E/J;
Front side- polished, epi-ready;
Back side – etched
Package – each are packed in single wafer container, in the package of aluminium foil bag filled with an inert gas.

For more information, please contact us email at [email protected] and [email protected]

2020-05-15

3″ Silicon Wafer-2

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 SEMI TESt n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 10,000-12,000 SEMI Prime, Lifetime>1,500μs n-type Si:P [111] ±0.5° 3″ 415 ±15 BROKEN FZ 10,000-12,000 Broken E/E wafers, in two pieces, Lifetime>1,500μs, n-type Si:P [111] ±0.5° 3″ 2500 C/C FZ 7,000-13,000 SEMI, Individual cst n-type Si:P [111] ±0.5° 3″ 370 P/E FZ >5,000 SEMI [...]

2019-03-06meta-author

6″ FZ Silicon Wafer

PAM XIAMEN offers 6″FZ Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 6″ {150.0±0.5mm}Ø×1,000±25µm, FZ p-type Si:B[111]±0.5°, Ro > 5,000 Ohmcm, One-side-polished, Particles: <[email protected]≥0.3µm, back-side etched, One SEMI Flat (57.5mm), Edges: rounded, Sealed in Empak or equivalent cassette, BOW<30µm, MCCLifetime>1000µs. For more information, please [...]

2019-08-22meta-author

Geometry and Thermal Stress Analysis of In-plane Outgassing Channels in Al2O3-Intermediated InP (Die)-to-Si (Wafer) Bonding

Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]

2020-03-09meta-author

Ni-Coated Si

PAM XIAMEN offers Coated Silicon wafer. Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,5x5x0.5mmSSP, R:1-20 ohm.cm Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm Nickel<111> Film (100nm) [...]

2019-04-28meta-author

CZT γ-ray Multi-pixel Imaging System

CZT γ-ray multi-pixel imaging system of PAM-XIAMEN adopts a imaging module of multi-pixel energy spectrum. It can be spliced into a 5×5 array without any blind spots. A total of 6,400 pixels make up a 127x127mm CZT (Cadmium Zinc Telluride) detector square. The system can [...]

2021-07-19meta-author

AlScN Template

AlScN (Aluminum Scandium Nitride) thin film on sapphire or silicon substrate can be provided by PAM-XIAMEN for the application of SAW / FBAR filters, optoelectronic devices, power devices and MEMS. AlScN, a III-V semiconductor based ferroelectric, is a promising semiconductor material at present, which [...]

2021-09-10meta-author

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[email protected] [email protected]

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InGaSb Film on GaAs Substrate

InGaSb Film on GaAs Substrate