INP INDIUM PHOSPHIDE CRYSTAL SUBSTRATES

PAM XIAMEN offers InP Indium Phosphide Crystal Substrates.

Choose high-quality InP (Indium Phosphide) crystal substrates for sale at PAM XIAMEN Supplies. Our InP substrates come in many sizes and conductivity types.

Main Parameters
Single crystal	Dopant	Conductivity type		Carrier concentration	Mobility(cm2/V.s)	Dislocation density(cm-2)	Standard wafer sizes
				cm-3
InP	none			(0.4-2)*10^16	3500~4000	5*10^4	Φ2×0.35mm
		N					Φ3×0.35mm
InP	S	N		(0.8-3)*10^18	2000~2400	3*10^4	Φ2×0.35mm
				(4-6)*10^18	1300~1600	2*10^3	Φ3×0.35mm
InP	Zn	P		(0.6-2)*10^18	1200~3500	2*10^4	Φ2×0.35mm
							Φ3×0.35mm
InP	Te	N		107-10^8	2000	3*10^4	Φ2×0.35mm
							Φ3×0.35mm
Dimension (mm)			Dia 50.8×0.35mm, 10×10×0.35mm, 10×5×0.35mm
Surface roughness			Surface roughness(Ra):<=5A
Polishing			Single side or double side polished

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-03-12

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