INP INDIUM PHOSPHIDE CRYSTAL SUBSTRATES

PAM XIAMEN offers InP Indium Phosphide Crystal Substrates.

Choose high-quality InP (Indium Phosphide) crystal substrates for sale at PAM XIAMEN Supplies. Our InP substrates come in many sizes and conductivity types.

Main Parameters
Single crystal	Dopant	Conductivity type		Carrier concentration	Mobility(cm2/V.s)	Dislocation density(cm-2)	Standard wafer sizes
				cm-3
InP	none			(0.4-2)*10^16	3500~4000	5*10^4	Φ2×0.35mm
		N					Φ3×0.35mm
InP	S	N		(0.8-3)*10^18	2000~2400	3*10^4	Φ2×0.35mm
				(4-6)*10^18	1300~1600	2*10^3	Φ3×0.35mm
InP	Zn	P		(0.6-2)*10^18	1200~3500	2*10^4	Φ2×0.35mm
							Φ3×0.35mm
InP	Te	N		107-10^8	2000	3*10^4	Φ2×0.35mm
							Φ3×0.35mm
Dimension (mm)			Dia 50.8×0.35mm, 10×10×0.35mm, 10×5×0.35mm
Surface roughness			Surface roughness(Ra):<=5A
Polishing			Single side or double side polished

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-03-12

Related Posts

6H SiC Wafer

PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating. Silicon carbide wafer is a material presenting different crystalline structures called polytypes, which has more than 250 structures. Different polytypes has different atomic stacking sequences. Polytypes generate the cubic, hexagonal or rhombohedral structures, which include [...]

2020-03-25meta-author

(100) Oriented Silicon Wafers-5

PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2973 n-type Si:P [100] 4″ 500 P/P FZ 198-200 SEMI Prime, 2Flats, Empak cst PAM2974 n-type Si:P [100-6°] ±0.5° 4″ 325 P/P FZ 1-10 SEMI Prime, 2Flats, Empak cst PAM2975 Intrinsic Si:- [100] 4″ 300 P/P FZ >20,000 SEMI Prime, 1Flat, [...]

2019-02-22meta-author

1″&1.5″ Silicon Wafer

PAM XIAMEN offers 1″&1.5″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 25.4 N Phos CZ -100 1-20 43768 P/P PRIME 25.4 N Phos CZ -100 1-20 40-60 P/P PRIME 25.4 N Phos CZ -100 1-20 80-100 P/P PRIME 25.4 N Phos CZ -100 1-20 140-160 P/P PRIME 25.4 N Phos CZ -100 225-275 P/P PRIME 25.4 N Phos CZ -100 225-275 P/P PRIME 25.4 N Phos CZ -100 250-300 P/E PRIME 25.4 N Phos CZ -100 250-300 P/E PRIME 25.4 P Boron CZ -100 1-20 43768 P/P PRIME 25.4 P Boron CZ -100 1-20 40-60 P/P PRIME 25.4 P Boron CZ -100 1-20 80-100 P/P PRIME 25.4 P Boron CZ -100 1-20 140-160 P/P PRIME 25.4 P Boron CZ -100 1-20 225-275 P/P PRIME 25.4 P Boron CZ -100 1-20 225-275 P/P PRIME 25.4 P Boron CZ -100 1-20 250-300 P/E PRIME 25.4 P Boron CZ -100 1-20 250-300 P/E PRIME 25.4 Intrinsic Undoped FZ -100 > 20000 275-325 P/E PRIME 25.4 N Sb CZ -100 .5-40 200-250 P/E PRIME 25.4 N Sb CZ -100 5-40 225-275 P/E PRIME 25.4 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 25.4 Shipping Cassette ePak Holds25Wafers Clean Room 38.1 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]

2019-02-27meta-author

Linearity enhancement design of a 16-channel low-noise front-end readout ASIC for CdZnTe detectors

Abstract A 16-channel front-end readout application-specific integrated circuit (ASIC) with linearity enhancement design for cadmium zinc telluride (CdZnTe) detectors is presented in this paper. The resistors in the slow shaper are realized using a high-Z circuit to obtain constant resistance value instead of using only [...]

2017-10-30meta-author

Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate

Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, [...]

2015-01-22meta-author inp file, inp grenoble, inp mozambique, inp toulouse

Fundamental issues of device-relevant low temperature GaAs and related materials properties

Fundamental issues of device-relevant low temperature GaAs and related materials properties In the past few years, a flurry of activity has been devoted to the studies and device applications of non-stoichiometric GaAs grown by molecular beam epitaxy at the extremely low temperature (LT) of 250 [...]

2014-01-10meta-author low temperature GaAs

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.