PAM XIAMEN offers InP Indium Phosphide Crystal Substrates.
Choose high-quality InP (Indium Phosphide) crystal substrates for sale at PAM XIAMEN Supplies. Our InP substrates come in many sizes and conductivity types.
Main Parameters | |||||||
Single crystal | Dopant | Conductivity type | Carrier concentration | Mobility(cm2/V.s) | Dislocation density(cm-2) | Standard wafer sizes | |
cm-3 | |||||||
InP | none | (0.4-2)*10^16 | 3500~4000 | 5*10^4 | Φ2×0.35mm | ||
N | Φ3×0.35mm | ||||||
InP | S | N | (0.8-3)*10^18 | 2000~2400 | 3*10^4 | Φ2×0.35mm | |
(4-6)*10^18 | 1300~1600 | 2*10^3 | Φ3×0.35mm | ||||
InP | Zn | P | (0.6-2)*10^18 | 1200~3500 | 2*10^4 | Φ2×0.35mm | |
Φ3×0.35mm | |||||||
InP | Te | N | 107-10^8 | 2000 | 3*10^4 | Φ2×0.35mm | |
Φ3×0.35mm | |||||||
Dimension (mm) | Dia 50.8×0.35mm, 10×10×0.35mm, 10×5×0.35mm | ||||||
Surface roughness | Surface roughness(Ra):<=5A | ||||||
Polishing | Single side or double side polished |
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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