Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services announced the new availability of size 2-4″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to offer InP substrate to our customers including many who are developing better and more reliable for Fiber optics network components. Our InP substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient to be 1.6 × 10−3 for Fe in InP. Semi-insulating InP crystals with resistivity > 10^7 ohm—cm have been grown consistently from melts doped with 150 ppm Fe. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InP substrate are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.”
PAM-XIAMEN’s improved InP product line has benefited from strong tech. support from Native University and Laboratory Center.
Now it shows an example as follows:
|Carrier Density||(1~6) x 1018||cm -3|
|Mobility||1200 ~ 2000||cm2▪ V-1 ▪ sec-1|
|Resistivity||(0.6~6) x 10-3||Ω ▪ cm|
|Orientation||(100) ± 0.2||degree|
|Thickness||350 ± 10||μm|
|Mirror Polished (Etched)|
Mirror Polished (Etched)
Individual N2 gas Package
|Size (Diameter)||50 ± 0.1||mm|
(0-1-1) ± 0.05
16 ± 2
(0-11) ± 2
7 ± 2
About Xiamen Powerway Advanced Material Co., Ltd
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
About InP substrate
Bulk polycrystalline InP(Indium Phosphide) is synthesized from the elements via a gradient freeze process. Hall data for a typical boule are Nd-Na= 4.7 × 1015/cm3 and Μ77 = 28,000 cm2/V-sec. Photoluminescence data indicate that zinc is present as an acceptor impurity in the polycrystalline InP and in nominally undoped LEC single crystals grown using the synthesized InP as charge material.