InP wafer

Xiamen Powerway offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

  • Description

Product Description

Xiamen Powerway offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

Wafer Specification
Item Specifications
Wafer Diameter 50.5±0.4mm
Crystal Orientation (100)±0.1°
Thickness 350±25um / 500±25um
Primary flat length 16±2mm
Secondary flat length 8±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette
Electrical and Doping Specification
Conduction Type n-type n-type n-type n-type p-type p-type
Dopant Undoped Iron Tin Sulphur Zinc Low Zinc
E.D.P cm-2 5000 5000 50000 1000 1000 5000
Mobility cm² V-1s-1 4200 1000 2500-750 2000-1000 Not Specified Not Specified
Carrier Concentration cm-3 1016 Semi-Insulating 7-40*1017 1-10*1018 1-6*1018 1-6*101

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