InP wafer
Xiamen Powerway offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
- Description
Product Description
Xiamen Powerway offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter | 50.5±0.4mm |
| Crystal Orientation | (100)±0.1° |
| Thickness | 350±25um / 500±25um |
| Primary flat length | 16±2mm |
| Secondary flat length | 8±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | ||||||
| Conduction Type | n-type | n-type | n-type | n-type | p-type | p-type |
| Dopant | Undoped | Iron | Tin | Sulphur | Zinc | Low Zinc |
| E.D.P cm-2 | ≤5000 | ≤5000 | ≤50000 | ≤1000 | ≤1000 | ≤5000 |
| Mobility cm² V-1s-1 | ≥4200 | ≥1000 | 2500-750 | 2000-1000 | Not Specified | Not Specified |
| Carrier Concentration cm-3 | ≤1016 | Semi-Insulating | （7-40）*1017 | （1-10）*1018 | （1-6）*1018 | （1-6）*101 |
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