InP Wafer

PAM XIAMEN offers InP Wafer.

InP(100)

InP (100) Sn-doped
InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp

InP (100)undoped
InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp
VGF InP (100) undoped, 2″ x 0.35 mm wafer, 1sp
VGF InP (100) undoped, 2″ x 0.35 mm wafer, 2sp

InP(100) Zn-doped
InP ,Growing Method: VGF(100) Zn doped,3 ” x 0.625mm, wafer, 1sp
VGF InP (100) Zn doped, 2″ x 0.35mm, wafer, 1sp

InP(100) Fe -doped
VGF InP (100) Fe doped, 2″x0.35 mm wafer, 1sp

InP(100) s-doped
InP-(VGF- Grown) (100) S doped, 2″x0.5mm wafer, 1sp
InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp

InP(110)

InP-VGF Grown (110) undoped, N-type, 2″x0.5 mm wafer, 2sp
VGF InP (110) Fe doped, 2″x0.5 mm wafer, 2sp

InP(111)

InP-(VGF- Grown) (111)A S doped, 2″x0.5mm wafer, 1sp
InP-(VGF- Grown) (111)A Zn- doped, P-type ,2″x (0.3-0.35) mm wafer, 1sp
InP-(VGF- Grown) (111)B S doped, 2″x0.35mm wafer, 1sp
InP-VGF Grown (110) undoped, N-type, 2″x0.5 mm wafer, 2sp
InP-VGF Grown (111)A undoped, 2″x0.35 mm wafer, 1sp
InP-VGF Grown (111)A undoped, 5x5x0.5 mm wafer, 1sp
InP-VGF Grown (111)A Fe doped, 2″x0.35 mm wafer, 1sp, Semi-insulating
InP-VGF Grown (111)A Fe doped, 2″x0.35 mm wafer, 2sp, Semi-insulating
InP-VGF Grown (111)B undoped, 2″x0.35 mm wafer, 1sp
InP-VGF Grown (111)B Fe doped, 2″x0.35 mm wafer, 1sp, Semi-insulating

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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