Indium Phosphide (InP) is a key semiconductor material that enables optical systems to deliver the performance required for data center, mobile backhaul, metro and long-haul applications. Lasers, photodiodes and waveguides fabricated on InP operate at the optimum transmission window of glass fiber, which enable efficient fiber communications. PAM-XIAMEN’s proprietary Etched Facet Technology (EFT) allows wafer level testing similar to traditional semiconductor manufacturing. EFT enables high yield, high performance and reliable lasers.
Orientation:(100)2°off+/-0.1 degree t.n. (110)
8)2″ size InGaAs/InP epitaxial wafer,and we accept custom specs.
Substrate: (100) InP substrate
Epi Layer 1: In0.53Ga0.47As layer , undoped , thickness 200 nm
Epi Layer 2: In0.52Al0.48As layer , undoped , thickness 500 nm
Epi Layer 3:In0.53Ga0.47As layer , undoped , thickness 1000 nm
Top Layer :In0.52Al0.48As layer , undoped , thickness 50 nm
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers the highest purity InGaAs/InP Epitaxial Wafers in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality Indium Phosphide Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6μm, ideally suited for high speed, long wavelength imaging, high speed HBT and HEMTs, APDs and analog-digital converter circuits. Applications using InP-based components can greatly exceed transmission rates in comparison to similar components structured on GaAs or SiGe based platforms.
If you are more interesting in insb wafer,Please send emails to us;firstname.lastname@example.org,and visit our website:www.powerwaywafer.com.