PAM XIAMEN offers 2″CZ Prime Silicon Wafer-3
Silicon wafer
dia 2 inch
thickness 280 um
P type boron doped or N doped
resistivity- 1-10 ohm cm
orientation-100
For more information, send us email at [email protected] and [email protected]
2020-06-12meta-author
Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a [...]
2018-01-30meta-author
Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration of native point defects. The positions of the stoichiometric line PS = 8×105exp (-1.76×104/T) (atm) and the room-temperature and high-temperature p-n lines were evaluated from high-temperature in situ [...]
2019-07-16meta-author
PAM XIAMEN offers Indium Tin Oxide Coated Glass.
MAIN PRODUCTS
ITO coated glass
ITO coated plastic film (PET, PEN, etc)
Fluorine-tin-oxide FTO coated glass
FPD and ITO glass detergents
We have the following Indium Tin Oxide wafers. Please let us know if any interest you.Item
Dia
Thk
DescriptionPAM3343
25mm Sq
1.1mm
15-20 ohm/sq ITO glass Size: [...]
2019-02-27meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-2
2″ Silicon Wafer
Resistivity 1-5Ωcm
P type, Boron doped
Orientation (100)
Thickness 300±25μm
SSP
SEMI Prime, 1Flat, Hard cst
For more information, send us email at [email protected] and [email protected]
2020-06-11meta-author
The GaN lattice mismatch grown on silicon carbide substrates is low. The low lattice mismatch of gallium nitride on SiC wafers indicates that the lattices of layer 1 and layer 2 match each other. The better the match, the fewer defects, and the better the performance and lifetime [...]
2021-04-26meta-author
