The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an [...]
2019-06-17meta-author
Nichia Develops Higher Power Green Laser Diodes
CompoundSemi News Staff
November 23, 2012…Nichia Corporation reports that it has successfully developed a high-power pure green laser diode which has optical output power higher than 1W with 525nm lasing wavelength. Nichia says that the laser will be applied [...]
2013-02-28meta-author
Measurement of threading dislocation densities in GaN by wet chemical etching
We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid [...]
2013-05-16meta-author
InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application
We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked InP(111)B substrate. This technique [...]
2018-04-26meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Red Phos.
N+
100
47,5 ± 2,5
01T ± 0,50
0.0 ± 0.5°
0.015 – 0.035 Ohmcm
150 ± 0.5 mm
400 ± 15 µm
40
5
40
6
SSP
Red Phos.
N+
100
47,5 ± 2,5
01T ± 0,50
0.0 ± 0.5°
0.015 [...]
2019-02-25meta-author
Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE
We have investigated the dependence of the conductive layer width and Hall mobility in n-GaAs/LT-GaAs structures on the conditions of low temperature (LT) buffer growth and on annealing parameters. Both the [...]