InP/InGaAs/InP epi wafer

We can offer 2″ InP/InGaAs/InP epi wafer as follows:

InP Substrate:

Indium Phosphide wafers,

P/E 2″dia×350+/-25um,

n-type InP:S

(100)+/-0.5°,

EDP<1E4/cm2.

One-side-polished, back-side matte etched, SEMI Flats.

EPI layer :

Epi 1: InGaAs:(100)

Thickness:100nm,

etching stop layer

Epi 2: InP:(100)

Thickness:50nm,

bonding layer

Source: PAM-XIAMEN

If you need more information about InP/InGaAs/InP epi wafer , please visit our website:https://www.powerwaywafer.com/, send us email at [email protected]or [email protected].

2013-11-13 InP/InGaAs/InP epi wafer

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InP/InGaAs/InP epi wafer

InP/InGaAs/InP epi wafer

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