Storage Performance Analysis of InSb Compound

Storage Performance Analysis of InSb Compound

Indium antimonide (InSb) compound semiconductor, as a direct bandgap semiconductor material, has low electron effective mass, high mobility, and narrow bandgap width. At low temperatures, InSb compound has a high absorption coefficient for infrared light, with a quantum efficiency greater than or equal to 80%. In terms of mid infrared detection in the 3-5um wavelength band, detectors based on InSb materials stand out among many material devices due to their mature material technology, high sensitivity, and good stability. Semiconducting compound InSb has become the preferred material for the preparation of mid wave infrared detectors. PAM-XIAMEN can supply InSb III-V compound semiconductor for device fabrication and academic researches, taking the following specification for example:

InSb compound substrate

1. Specification of InSb Substrate

Item InSb Substrate
Thickness 525±25um
Orientation [111A]±0.5°
Type/Dopant N/Te
Resistivity 0.02~0.028 ohm·cm
Nc (4-8)E14cm-3/cc
EPD <100/cm2
Mobility >1E4 cm2/Vs
Surface Finished SSP, DSP


2. Storage Performance Analysis of InSb Compound Substrate

Generally speaking, InSb compound semiconductor materials may be stored for a period of time after processing before being used to prepare detectors. Therefore, the performance stability of InSb wafers during storage and use is one of the important factors affecting the performance of detectors prepared.

In order to investigate the performance changes of InSb compound wafer under long-term storage, researchers have conducted high-temperature accelerated storage tests on InSb (111) substrate. During the test, several important InSb compound properties such as wafer geometry, surface roughness, electrical parameters, and dislocation defects were tracked and detected. The results indicate that under high temperature acceleration test conditions, the surface roughness remains basically unchanged. Under the experimental conditions, there was no addition or movement of dislocations within the substrate, and electrical parameters such as carrier concentration remained unchanged. During normal atmospheric temperature storage, the performance of InSb compound remains unchanged for at least 2 years.


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