InSb Epi Wafer

InSb Epi Wafer

Xiamen Powerway offers InSb Epi Wafer with Homogeneous Structure and Hetero-structure:

Substrate: InSb, Thickness: 500um, Te doped with doping concentration of 3.4E18cm-3
1st Layer: InSb, Thickness: 4000nm, Si doped (n+) with doping concentration of 3.0E18cm-3
2nd Layer: InSb, Thickness: 250nm, Si doped (n-) with doping concentration of 2.0E15cm-3
3rd Layer: In(1-x)Al(x)Sb (x=0.15), Thickness: 20nm, Be doped (p+) with doping concentration of 2.0E18cm-3
4th Layer: InSb, Thickness: 1000nm, Be doped (p+) with doping concentration of 2.0E18cm-3

InSb Homogeneous Structure2:

Substrate: InSb, Thickness: 500um, Te doped with doping concentration of 3.4E18cm-3
1st Layer: InSb, Thickness: 4000nm, Si doped (n+) with doping concentration of 3.0E18cm-3
2nd Layer: InSb, Thickness: 250nm, Si doped (n-) with doping concentration of 2.0E15cm-3
3rd Layer: InSb, Thickness: 1000nm, Be doped (p+) with doping concentration of 2.0E18cm-3

For more information, please visit our website: https://www.powerwaywafer.comand send us email at victorchan@powerwaywafer.com 

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