InSb Wafer

PAM XIAMEN offers InSb Wafer.

InSb Ge-doped

InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished

InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1

InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 sided polished , carrier conc: (0.5-5.0)x10^17/cc

InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 2 sided polished , CC: 1.35×10^15/cc

InSb Te-doped

InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished

InSb (100) 5 x 5 x 0.45 mm, N type, Te doped, 1 side polished

InSb (100) 2″ dia x 0.45 mm, Te doped, N type, 1 side polished

InSb (100) 2″” dia x 0.5 mm, Te doped, N type, 2 side polished”

InSb (111)- B 2″ dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished

InSb undoped

InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished

InSb (100) 10x10x 0.5mm, Undoped, N type, 2 sides polished

InSb (100) 5x5x 0.5mm, Undoped, N type, 2 sides polished

InSb (100) 5x5x0.5 mm, Undoped, N type, 1 side polished

InSb (100) 2″ dia x 0.5 mm, Undoped, N type, 1 side polished

InSb (100) 2″ dia x 0.5 mm, N type Undoped, 2 sides polished

InSb (111)A 2″ dia x 0.5 mm, Undoped, N type, one side polished

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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