InSb wafer

PAM-XIAMEN offers InSb wafer – Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

  • Description

Product Description

PAM-XIAMEN offers InSb wafer – Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras,FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.

Wafer Specification
Item Specifications
Wafer Diameter 2″50.5±0.5mm
3″76.2±0.4mm
4″1000.0±0.5mm
Crystal Orientation 2″(111)AorB±0.1°
3″(111)AorB±0.1°
4″(111)AorB±0.1°
Thickness 2″625±25um
3″ 800or900±25um
4″1000±25um
Primary flat length 2″16±2mm
3″22±2mm
4″32.5±2.5mm
Secondary flat length 2″8±1mm
3″11±1mm
4″18±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette
Electrical and Doping Specification
Conduction Type n-type n-type n-type n-type p-type
Dopant Undoped Tellurium Low tellurium High tellurium Genmanium
EPD cm-2 2″3″4″50 2″100
Mobility cm² V-1s-1 4*105 2.5*104 2.5*105 Not Specified 8000-4000
Carrier Concentration cm-3 5*1013-3*1014 1-7*1017 4*1014-2*1015 1*1018 5*1014-3*1015

1)2″InSb
Orientation:(100)
Type/Dopant:N/undoped
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP

2)2″InSb
Orientation:(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 um;525±25µm
EPD < 200 cm-2
Polish:SSP

3)2″InSb
Orientation:(111) + 0.5°
Thickness:450+/- 50 um
Type/Dopant:N/undoped
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP

4)2″InSb
Orientation:(111) + 0.5°
Type/Dopant:P/Ge
Polish:SSP

5)2″InSb
Thickness:525±25µm,
Orientation:[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=(4-8)E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP

6)2″ GaSb
Thickness:525±25µm,
Orientation:[111B]±0.5°,
Type/Dopant:P/undoped;N/undoped
Polish:SSP;DSP

Surface Condition and other Specification
Indium Antimonide (InSb) wafer can be offered as wafers with as-cut, etched or polished finishes with wide range of doping concentration and thickness. The wafer could be high quality epi-ready finishing.

Orientation Specification

Wafer surface orientations are supplied to an accuracy of +/- 0.5 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. The available orientaiton could be (100),(111), (110) or other orientation or mis degree.

Packaging condition
Polished wafer:individually sealed in two outer bags in inert atmosphere. Cassette shipments are available if required).
As-cut Wafer:Cassette shipment. (Glassine bag available on request).

Words Wiki
Indium antimonide (InSb) wafer is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductormaterial from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidancesystems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiationsource as it is a strong photo-Dember emitter.

Relative products:
InAs wafer
InSb wafer
InP wafer
GaAs wafer
GaSb wafer
GaP wafer

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