Intrinsic SiC Epilayer on Silicon carbide substrate

Intrinsic SiC Epilayer on Silicon carbide substrate

High purity undoped or Intrinsic SiC Epilayer on Silicon carbide substrate(PAM-191014-SIC) are offered, its carrier concentration is extremely low(for detail data, please consult our team: [email protected]) and its resistivity is high, semi-insulating. Some researchers use its property to study color centers in wide band-gap semiconductors or Silicon vacancy in SiC in condensed matter physics. It was also mentioned in the literature in 2014 that the impurity concentration of 10^14cm-3 was mentioned in the ultra-pure sample, it is not the purest in fact.

Also another option is to research silicon vacancy in SiC, in this field research, there are paper also mentioned as below: “510um thick commercial on-axis high-purity semi-insulating 4H-SiC single crystal sample.

High-purity 4H-SiC epitaxy growth wafers with a thickness of about 7 μm are used (Xiamen Powerway Advanced Material Co., Ltd).”、“Commercially available high-purity 4H-SiC substrate.”、“A commercially available high purity 4H-SiC epitaxy layer(4du off-axis, thickness is about 7um,”

For undoped epilayer, its resistivity would be >60 ohm.cm.

See below spec as an example:

6-inch SiC epiwafers PAM-210322-SIC-EPI
SiC Substrate
Diameter: 150mm,
Thickness: 350um thick;
n-type
4H-SiC,
4-degree off-axis,
MPD<=1/cm2
Resistivity:0.015~0.028 ohm-cm
Double side polished.
Epi layer:
Epi :Thickness:10um , undoped

 

 

 

For more information, please contact us email at [email protected] and [email protected]

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