Intrinsic SiC Epilayer on Silicon carbide substrate

Intrinsic SiC Epilayer on Silicon carbide substrate

High purity undoped or Intrinsic SiC Epilayer on Silicon carbide substrate(PAM-191014-SIC) are offered, its carrier concentration is extremely low(for detail data, please consult our team: and its resistivity is high, semi-insulating. Some researchers use its property to study color centers in wide band-gap semiconductors or Silicon vacancy in SiC in condensed matter physics. It was also mentioned in the literature in 2014 that the impurity concentration of 10^14cm-3 was mentioned in the ultra-pure sample, it is not the purest in fact.

Also another option is to research silicon vacancy in SiC, in this field research, there are paper also mentioned as below: “510um thick commercial on-axis high-purity semi-insulating 4H-SiC single crystal sample.

High-purity 4H-SiC epitaxy growth wafers with a thickness of about 7 μm are used (Xiamen Powerway Advanced Material Co., Ltd).”、“Commercially available high-purity 4H-SiC substrate.”、“A commercially available high purity 4H-SiC epitaxy layer(4du off-axis, thickness is about 7um,”

For undoped epilayer, its resistivity would be >60

See below spec as an example:

1. Specification of Intrinsic SiC on SiC

6-inch SiC epiwafers PAM-210322-SIC-EPI
SiC Substrate
Diameter: 150mm,
Thickness: 350um thick;
4-degree off-axis,
Resistivity:0.015~0.028 ohm-cm
Double side polished.
Epi layer:
Epi :Thickness:10um , undoped

2. FAQ of Semi-insulating SiC Epilayer

Q: We unpacked the sample of 4inch intrinsic SiC epilayer grown on N type SiC substrate and found many triangular scratches on the surface and a large round black spot in the center. As scratches will affect the use, how to deal with them? What is the black spot in the center?

A: 1) Triangular defect is one of the common epitaxial surface defects. According to the data tested, the defect density of this semi-insulating SiC epi wafer is 0.7cm-2, which belongs to the normal range. In fact, it is very good.

2) There is a large round black spot in the center of the SiC epitaxial wafer as feedback. This is the unique growth facet in the conductive (N-type) silicon carbide. It belongs to the unique property of the conductive silicon carbide and has no impact on your use.




For more information, please contact us email at and

Share this post