PAM XIAMEN offers Tatalum Metal Substrate & Foil ( Polycrystalline ).
Symbol Ta
Atomic Number 73
Atomic Weight: 180.95
Density: 16.69 g/cm3
Melting Point: 2996 °C
Boiling Point: 5425+/-100 °C
Ta – Tantalum Polycrystalline Metallic Foil: 0.05mm thick x 200mm Width x 400 mm Length
Ta [...]
2019-05-10meta-author
As an important part of new materials, semiconductor materials are the top priority of all countries in the world for the development of electronic information industry. It supports the development of localization of electronic information industry and is of great significance to industrial structure [...]
2019-04-02meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-111
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-111
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-110
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-110
1-20
500-550
P/E
PRIME
100
Any
Any
CZ
Any
Any
350-600
P/E
TEST
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
P
Zn
VGF
(100) off 2 deg twd <110>
0.01
375-425
P/E
epi
100
P
Zn
VGF
-100
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
10000000
610-660
P/P
EPI
100
Undoped
CZ
-100
>30
450-500
P/P
EPI
100
Undoped
CZ
-100
>30
500-550
P/E
EPI
100
N
Sb
CZ
(100)-9
<.4
150-200
P/E
EPI
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
EPI
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
EPI
100
P
Ga
CZ
-100
.01-.04
450-500
P/P
EPI
100
P
Ga
CZ
-100
.01-.04
500-550
P/E
EPI
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
100
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
100
Shipping Cassette
ePak
Holds25Wafers
Clean Room
101.6
N
Phos
CZ
-100
1-20
300-350
P/P
101.6
N
Phos
CZ
-100
1-20
350-400
P/E
101.6
P
Boron
CZ
-100
1-20
300-350
P/P
101.6
P
Boron
CZ
-100
1-20
350-400
P/E
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-03-04meta-author
New InGaAs Structure Wafer
Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
75 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
136 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
20
n- Si:P
300±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
21
n- Si:P
400±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
12.5±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.08 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.04 ±10%
N/N+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
37.5
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
37.5
n- Si:P
85±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
58
n- Si:P
60±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
8±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
5
n- Si:P
3±10%
N/N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
60
n- Si:P
40.5±4.5
N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
20
n- Si:P
10±2
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- Si:P
58.75 ±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- [...]
2019-03-08meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 1000±25μm.
Thickness 1000±25μm
Si, 150mm dia. SSP
N type Phos or antimony
resistivity 0.01-0.2 ohm-cm
with 200A thermal OX and
1200A LPCVD nitride – stoichiometric
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-01meta-author