After the growth, the silicon carbide single crystal is crystal ingot with surface defects, which cannot be directly used for epitaxy. Therefore, it requires chemical mechanical polishing on silicon carbide. Among the processing skills, spheronization makes the crystal ingot into a standard cylinder; wire [...]
2021-04-02meta-author
Formation of InAs quantum dots on low-temperature GaAs epi-layer
InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers and on normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM evidences that self-organized QDs [...]
2014-02-28meta-author
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-8
4″ GDFZ Si wafer
N type, As doped
Orientation (100)
Thickness 250±25μm,
Resistivity 0.001-0.005Ωcm
DSP
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with [...]
2019-10-25meta-author
PAM XIAMEN offers GaN LED epiwafer, which is grown on a patterned sapphire substrate (Al2O3) heated to an appropriate temperature, the gaseous substance InGaAIP is transported to the surface of the substrate in a controlled manner, and a specific single crystal film is grown. At [...]
2019-03-15meta-author
Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of [...]
PAM XIAMEN offers high-quality Bi2Se3.
Molar mass: 654.8 g/mol
Appearance: Dull grey
Lattice Parameters: a=4.14 A, c=28.7 A
Density: 6.82 g/cm^3
Melting point:710 °C (1,310 °F; 983 K)
Structure: Hexagonal
Displaying products 1 – 1 of 1 results
Bi2Se3 Single crystal (0001) orn. 10x10x1.0 mm, both sides polished [...]
2019-04-17meta-author