PAM XIAMEN offers CZT and MCT crystal.
CZT and MCT crystal are new semiconductors which enables effective conversion of radiation to electron. The technology will reform radiography and radiation measurement in medical and industrial areas. We both provides the standard substrate , CZT and [...]
2019-04-19meta-author
Hybrid Chips of Gallium Nitride and Silicon
Researchers at MIT say they’ve made a big step toward combining the capabilities of the silicon used in computer chips with properties of the compound semiconductors found in lasers and high-powered electronics. In the October issue of IEEE Electron [...]
PAM XIAMEN offers 150mm&200mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
150
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-550
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-600
P/E
TEST
150
N
Phos
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
N
Phos
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-550
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-600
P/E
TEST
150
P
Boron
CZ
-100
.001-.005
650-700
P/E
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
150
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
N
Si
VGF
-100
650-700
P/E
PRIME
150
P
Zn
VGF
-100
650-700
P/E
PRIME
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
150
Si
Undoped
VGF
-100
>1E7
650-700
P/E
PRIME
150
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Round
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Shipping Cassette
ePak
Holds25Wafers
Clean Room
200
N
Phos
CZ
-100
1-20
700-750
P/E/OX
PRIME
200
P
Boron
CZ
-100
1-100
600-800
P/E
TEST
200
P
Boron
CZ
-100
1-20
700-750
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-03-04meta-author
Dia 3 inch semi insulating GaAs substrate is available. GaAs materials are mainly divided into two categories: semi-insulating gallium arsenide material and semiconductor gallium arsenide material. Here we will discuss the semi-insulating gallium arsenide material. Semi-insulating property is a basic physical property of gallium arsenide material, and it [...]
2020-03-10meta-author
Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows [...]
MgO single crystal substrate-1
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in [...]
2019-05-13meta-author