PAM XIAMEN offers 4″ Prime EPI Wafer.
Substrate:
1. Growth Method CZ
2. Diameter100+/-0.5mm
3. Type-Dopant, P- Boron
4. Resistivity 0.002 – 0.003 ohm-cm
5. Resistivity Radial Variation<10 %
6. Crystal Orientation<111> 4+/- 0.5degree
7. Primary Flat: Orientation Semi degree, Length Semi mm
8. [...]
2019-07-03meta-author
PAM XIAMEN offers SiC Epi Film (3C) on Silicon Wafer
The only pure cubic polytype, 3C-SiC, has many advantages for MOS device applications over the other polytypes due to the smaller band gap. In addition, the electron Hall mobility is isotropic and higher compared with [...]
2019-04-28meta-author
5-5-3 SiC Contacts and Interconnect
All useful semiconductor electronics require conductive signal paths in and out of each device as well as
conductive interconnects to carry signals between devices on the same chip and to external circuit
elements that reside off-chip. While SiC itself is theoretically capable [...]
2018-06-28meta-author
PAM XIAMEN offers Single crystal CdS window.
CdS (0001) 5 mm X 5 mm x 0.5 mm , 1 Sides polished
CdS (0001) 5 mm X 5 mm x 0.5 mm , 2 Sides polished
CdS (0001) 5 mm x 5 mm x1.0 mm, [...]
2019-04-19meta-author
PAM XIAMEN offers YSZ crystal.
YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter.
YSZ substrates (111)
YSZ (111) 5x5x0.5mm, 1SP”
YSZ (111) 10x10x0.5mm, [...]
2019-05-21meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish
Intrinsic Si:-
[100]
4″
615 ±10
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
4″
800
C/C
FZ >10,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
525
P/E
FZ >22,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
300
P/E
FZ 20,000-40,000
SEMI, TTV<5μm
Intrinsic Si:-
[111] ±0.5°
4″
450
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[111] ±0.5°
4″
500
P/E
FZ >20,000
SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers
Intrinsic Si:-
[111] ±1.0°
4″
500
P/P
FZ >15,000
SEMI Prime, TTV<5μm
p-type Si:B
[110] ±0.25°
4″
525
P/E
5-10
SEMI [...]
2019-03-05meta-author