Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon elements, and is called wide-bandgap semiconductor material because the band gap is greater than 2.2eV. PAM-XIAMEN can provide N-type and semi-insulating SiC wafers. More specifications of SiC wafer please visit https://www.powerwaywafer.com/sic-wafer.
How SiC wafers [...]
2022-08-17meta-author
Study of Highly Pixelated CdZnTe Detector for PET Applications
We are investigating the feasibility of a high-resolution PET insert device based on a Cadmium Zinc Telluride (CdZnTe) detector with 350 μm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its [...]
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2179
p-type Si:B
[100]
2″
300
P/E
1–10
SEMI Prime, 2Flats, hard cst
PAM2180
p-type Si:Ga
[100]
2″
350
P/P
1–5
SEMI Prime, 2Flats, hard cst
PAM2181
p-type Si:B
[100]
2″
500
P/E
1–2
SEMI Prime, 2Flats, hard cst
PAM2182
p-type Si:B
[100]
2″
900
P/E/P
1–10
SEMI Prime, 2Flats, hard cst
PAM2183
p-type Si:B
[100]
2″
2000
P/P
1–10
SEMI Prime, 2Flats, Individual cst
PAM2184
p-type Si:B
[100]
2″
2000
P/E
1–10
SEMI Prime, [...]
2019-02-18meta-author
Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer [...]
2013-08-01meta-author
PAM-XIAMEN offers (20-2-1) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-2-1)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email [...]
2020-09-02meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers (100).
2″ Diameter Wafer
2″ wafers (100)
2“ Undoped Ge (100)
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, 1SP, resistivities: >50 ohm-cm
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP [...]
2019-04-23meta-author